SM8S36AHE3/2D Allicdata Electronics
Allicdata Part #:

SM8S36AHE3/2DGITR-ND

Manufacturer Part#:

SM8S36AHE3/2D

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 36V 58.1V DO218AB
More Detail: N/A
DataSheet: SM8S36AHE3/2D datasheetSM8S36AHE3/2D Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Current - Peak Pulse (10/1000µs): 114A
Base Part Number: SM8S
Supplier Device Package: DO-218AB
Package / Case: DO-218AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Series: Automotive, AEC-Q101, PAR®
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Voltage - Reverse Standoff (Typ): 36V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The SM8S36AHE3/2D, often referred to as an TVS-Diodes, is a voltage dependent transient voltage surge protector. It is designed to protect electronic devices from damage due to transient voltages, such as those caused by lightning or other overvoltage events. The SM8S36AHE3/2D diode is used to divert destructive transient voltages away from sensitive components, thereby preserving their performance and longevity.

In terms of application fields, the SM8S36AHE3/2D diode can be used to protect diverse electronic equipment ranging from integrated circuits socket and connectors, industrial control systems, domestic appliances, computer and telecommunications systems, and consumer electronics products. As such, it is suitable for use in a wide range of industries, from medical to military.

The working principle of the SM8S36AHE3/2D diode hinges on two core phenomena. Firstly, it uses the breakdown voltage of the diode to protect circuit from destruction due to transient overvoltage events. When an overvoltage event occurs, the diode begins to conduct and absorb the additional voltage.

In addition, the SM8S36AHE3/2D diode contains a Zener breakdown mechanism. This Zener breakdown mechanism is responsible for limiting the voltage of the transient overvoltage events. When the voltage level of the transient surge reaches the breakdown level of the diode, the Zener breakdown mechanism kicks in and begins to absorb the excess voltage.

The SM8S36AHE3/2D diode has a variety of excellent features as well. It has a very high surge clamping capability of 150V, which ensures the effective protection of circuit elements. It also has a maximum surge current (Ipp) of 8A, which is plenty enough to prevent secondary breakdown. Finally, its peak pulse current (Ip) is 9.5A, ensuring the proper current flow during the operation.

The SM8S36AHE3/2D diode is specifically designed to be used in application fields where transient voltage surge protection and overvoltage protection are paramount. It is made of robust material and ensures that circuit elements remain safe and functional during overvoltage events. Its underlying workings are based on the breakdown voltage of the diode and the Zener breakdown mechanism and it has a very high surge clamping capability as well. All in all, the SM8S36AHE3/2D diode is an excellent choice for overvoltage protection.

The specific data is subject to PDF, and the above content is for reference

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