SMF51A RVG Allicdata Electronics

SMF51A RVG Circuit Protection

Allicdata Part #:

SMF51ARVG-ND

Manufacturer Part#:

SMF51A RVG

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE, TVS, UNIDIRECTIONAL, 200W
More Detail: N/A
DataSheet: SMF51A RVG datasheetSMF51A RVG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.05901
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Current - Peak Pulse (10/1000µs): 2.4A
Supplier Device Package: SOD-123W
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Series: SMF
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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TVS diodes are semiconductor devices used to provide protection against transient voltages, including electrostatic discharge (ESD), lightning, and inductive switching. One type of TVS device is the SMF51A RVG 30K Silicon Avalanche Diode, which has been used to effectively protect sensitive electronic components from damage due to high energy or voltage transients.

The SMF51A RVG 30K Silicon Avalanche Diode is a uni-directional, silicon avalanche diode.It is generally used in those systems where protection is needed against transient over-voltage while a low voltage dc level. The device has a standoff voltage of 30kV and is designed to be integrated into handheld or portable devices such as phones, smart cards, GPUs, and digital cameras. The device has an on-state voltage drop of 1.3 V, a breakdown voltage of up to 30kV, and a maximum peak pulse current of 20A. It is also designed to achieve an industry-leading leakage current rating, as low as 200nA.

The SMF51A RVG 30K has several features that make it an ideal device for use in transient voltage applications. First, it is exceptionally reliable and robust, being capable of dissipating high levels of energy before breakdown. In addition, it exhibits low capacitance, ensuring that it does not interfere with the normal operation of the electronics it is protecting. Finally, it is relatively small in size, making it an ideal choice for designs where space is at a premium.

The working principle of the SMF51A RVG 30K is based on the avalanche breakdown effect, which occurs when a diode is forward biased and a voltage is applied across the diode. As the voltage increases, it begins to reach a built-in potential barrier and the diode starts to conduct at much higher levels than it normally would. This causes an avalanche, or avalanche breakdown effect, in which the current increases exponentially until the built-in potential barrier is reached. Once reached, the diode is destroyed and ceases to conduct, protecting the circuit from the transient voltage or current.

The SMF51A RVG 30K is designed to be incorporated into a variety of systems, including power supplies, communication systems, and PCs. It is capable of providing exceptional levels of protection against transient voltage spikes, ESD, and other electrical disturbances. As such, it is an ideal choice for applications where protection from transient voltages and currents is critical. In addition, its small size enables it to be integrated into devices where space is at a premium, making it an ideal choice for portable electronics.

The specific data is subject to PDF, and the above content is for reference

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