SPB21N10 Discrete Semiconductor Products

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The SPB21N10 Power MOSFET is a single N-channel enhancement mode MOSFET that is constructed with a South Pole Bridge (SPB) design. This device is intended for use in Power Supply and Signal Switching applications. It has an optimized gate structure that can be used in a variety of applications such as power drain resistors, high-side switches, gate protected switches, and for switching operations. The SPB21N10 has a breakdown voltage of 21V and a threshold voltage (VTh) of 1V. It is capable of handling up to 12A of current at 25°C.

The SPB21N10 has an extremely low on-resistance. This is achieved by utilizing a trench DMOS process that utilizes an N-well technology to generate a very low on-resistance. The SPB21N10 also has an ESD protection on the gate and drain terminals that is capable of handling up to 3000V. This feature makes the SPB21N10 suitable for high-power applications.

The main advantage of the SPB21N10 is its ability to provide low loss operation. The SPB21N10 has very low leakage current (< 10µA) and a low temperature coefficient. Furthermore, the device also has high junction-to-case thermal resistance that makes it suitable for use in high power switching applications. The SPB21N10 also features a low dielectric loss that makes it suitable for a variety of signal switching applications.

The SPB21N10 features a high-current, low-voltage (max 3.7V) internal ESD protection circuit. This feature ensures the reliable operation of the device in applications where the device is subjected to high levels of ESD. Furthermore, the SPB21N10 has excellent gate Charge Characteristics that reduce the turn-on and turn-off times. This feature makes the device suitable for applications where high speed switching operation is necessary.

The SPB21N10 is also characterized by its robustness when exposed to electrical Over-Stress (EOS) conditions. The device is optimized to handle EOS conditions that can occur in power switching situations. Furthermore, the SPB21N10 has a high thermal conductivity which improves system reliability and allows the device to be used in high power switching applications.

The SPB21N10 is also characterized by its immunity to latch-up conditions. The rugged body structure of the device ensures that the device can withstand high levels of reverse voltage without latching up. The SPB21N10 features a robust high voltage drain-source avalanche breakdown (BVds) capability of 21V that allows for reliable operation in high voltage switching applications.

The SPB21N10 is suitable for a wide range of low power, high power, signal switching, and automotive applications. It can be used for general purpose power switching applications and is particularly suited for applications such as boost converters, off-line power supplies, DC/DC converters, and current limiters. The SPB21N10 is an excellent choice for a variety of low power, high power, and signal switching applications.

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