
Allicdata Part #: | SPB21N10T-ND |
Manufacturer Part#: |
SPB21N10T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 21A D2PAK |
More Detail: | N-Channel 100V 21A (Tc) 90W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 44µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 865pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPB21N10T is a type of n-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in various applications. Such devices consist of an electrical channel containing a gate, an emitter, and a collector. They are three-terminal devices, meaning that three connections need to be made for it to function properly. This particular MOSFET is designed for general purpose switching, and can be used in circuitry, computers, and other electronic devices.
To understand how the SPB21N10T works, it is important to understand the two types of MOSFETs and how they differ from one another. The first type is the n-channel MOSFET. This type has an n-type semiconductor substrate and is capable of carrying more current than its sister type, the p-channel MOSFET. This is the type of MOSFET the SPB21N10T is, and it is commonly used in power applications.
The second type of MOSFET is the p-channel MOSFET. This type of MOSFET has a p-type semiconductor substrate, and it is not as efficient at carrying current as its counterpart. It is typically used in applications that require smaller amounts of current.
The SPB21N10T is an n-channel power MOSFET, which means that it has an n-type semiconductor substrate. This substrate has an open gate that is connected to an emitter, which is then connected to a collector. When a voltage is applied to the gate, the electrons within the substrate are attracted to the gate and form a conducting path between the collector and the emitter. This current flows to the load, which is the device using the electricity.
The SPB21N10T is designed for application in switching circuits, allowing for fast and efficient switching of an electrical current. These devices are extremely useful in computers, as they allow for the switching of small signals while still carrying a high current capacity. This makes them ideal for use with power supplies, motor control, and other digital applications.
The SPB21N10T is also designed with a higher thermal stability than many other MOSFETs. This means that it can tolerate higher operating temperatures and remain stable, making it ideal for applications that require consistent performance in high temperature environments.
In summary, the SPB21N10T is a type of n-channel power MOSFET that is designed for general purpose switching. It has an n-type semiconductor substrate, an open gate, and a high thermal stability, making it ideal for use in power applications, motor control, and other digital applications. Its high current capacity enables it to efficiently switch small signals, making it an invaluable device in many applications.
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