SPB21N10T Allicdata Electronics
Allicdata Part #:

SPB21N10T-ND

Manufacturer Part#:

SPB21N10T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 21A D2PAK
More Detail: N-Channel 100V 21A (Tc) 90W (Tc) Surface Mount PG-...
DataSheet: SPB21N10T datasheetSPB21N10T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 44µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SPB21N10T is a type of n-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in various applications. Such devices consist of an electrical channel containing a gate, an emitter, and a collector. They are three-terminal devices, meaning that three connections need to be made for it to function properly. This particular MOSFET is designed for general purpose switching, and can be used in circuitry, computers, and other electronic devices.

To understand how the SPB21N10T works, it is important to understand the two types of MOSFETs and how they differ from one another. The first type is the n-channel MOSFET. This type has an n-type semiconductor substrate and is capable of carrying more current than its sister type, the p-channel MOSFET. This is the type of MOSFET the SPB21N10T is, and it is commonly used in power applications.

The second type of MOSFET is the p-channel MOSFET. This type of MOSFET has a p-type semiconductor substrate, and it is not as efficient at carrying current as its counterpart. It is typically used in applications that require smaller amounts of current.

The SPB21N10T is an n-channel power MOSFET, which means that it has an n-type semiconductor substrate. This substrate has an open gate that is connected to an emitter, which is then connected to a collector. When a voltage is applied to the gate, the electrons within the substrate are attracted to the gate and form a conducting path between the collector and the emitter. This current flows to the load, which is the device using the electricity.

The SPB21N10T is designed for application in switching circuits, allowing for fast and efficient switching of an electrical current. These devices are extremely useful in computers, as they allow for the switching of small signals while still carrying a high current capacity. This makes them ideal for use with power supplies, motor control, and other digital applications.

The SPB21N10T is also designed with a higher thermal stability than many other MOSFETs. This means that it can tolerate higher operating temperatures and remain stable, making it ideal for applications that require consistent performance in high temperature environments.

In summary, the SPB21N10T is a type of n-channel power MOSFET that is designed for general purpose switching. It has an n-type semiconductor substrate, an open gate, and a high thermal stability, making it ideal for use in power applications, motor control, and other digital applications. Its high current capacity enables it to efficiently switch small signals, making it an invaluable device in many applications.

The specific data is subject to PDF, and the above content is for reference

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