Allicdata Part #: | SPD15P10PGBTMA1TR-ND |
Manufacturer Part#: |
SPD15P10PGBTMA1 |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 15A TO252-3 |
More Detail: | P-Channel 100V 15A (Tc) 128W (Tc) Surface Mount PG... |
DataSheet: | SPD15P10PGBTMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.51349 |
Vgs(th) (Max) @ Id: | 2.1V @ 1.54mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | Automotive, AEC-Q101, SIPMOS® |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 10.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SPD15P10PGBTMA1 is a type of insulating Gate Bipolar Transistor (IGBT), which is a four-terminal electrical device designed to function as a switch in power systems. It is the ideal choice for applications that require low switching losses, excellent noise immunity and superior reliability in a wide range of temperature environments. Its features and benefits make it suitable for various applications.
The SPD15P10PGBTMA1 has a maximum drain-source voltage of 600 volts and a maximum collector current of 15 Amps. It has two high-current, low-going gates – the G and S gates. The G gate is responsible for turning the device on and the S gate is responsible for turning it off. When both gates are high, the device is in the open mode, meaning current can flow from the drain to the source. When the G gate rises above 4.5V and the S gate drops below -4.5V, the device will turn on. When the G gate drops below 4.5V and the S gate rises above -4.5V, the device will turn off. In order to achieve fast turn-on and turn-off of the device, both the G and S gates must transition to their respective logic levels within a very short period of time.
One of the main advantages of the SPD15P10PGBTMA1 is its low on-board loss. This is achieved by the device’s low switching loss – the total energy lost due to switching – and the spikes of reverse recovery current during turn-on and turn-off. The IGBT also has superior noise immunity compared to conventional transistors, which helps reduce noise and increases system stability. The SPD15P10PGBTMA1 also offers excellent temperature stability and long-term reliability, making it suitable for many different applications.
The SPD15P10PGBTMA1 is primarily used in power systems where high efficiency and long life are required. It is suitable for use in high-speed switching operations and can be used for applications like motor control, battery charging, voltage regulation and home automation. It is also ideal for use in AC to DC and DC to AC converters. Other applications include aircraft power grid, UPS systems and even solar power systems.
In conclusion, the SPD15P10PGBTMA1 is an ideal choice for a wide range of applications due to its features, benefits and performance. It offers low switching loss and excellent noise immunity, making it ideal for applications that require reliable operation and long life. It is suitable for use in power systems and other applications such as motor control and battery charging.
The specific data is subject to PDF, and the above content is for reference
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