Allicdata Part #: | SPD100N03S2L04T-ND |
Manufacturer Part#: |
SPD100N03S2L04T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A DPAK |
More Detail: | N-Channel 30V 100A (Tc) 150W (Tc) Surface Mount PG... |
DataSheet: | SPD100N03S2L04T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 100µA |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: | PG-TO252-5 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3320pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 89.7nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The SPD100N03S2L04T is a single N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is designed to provide high power handling capabilities, low gate charge and improved thermal performance in a low-voltage operation. It is a low on-resistance, high side protected power MOSFET, which is an important component in a wide range of circuits and applications.
The SPD100N03S2L04T has two main application fields and working principles. In the first, it is used as a switch for DC-DC converters in high voltage applications. These applications require high switching speed and low on-resistance. The MOSFET is used to switch an inductor, capacitor and resistors as these elements form an LCR circuit in the switching devices. The MOSFET will open and close in accordance with the predetermined conditions and controls in the circuit, therefore controlling the flow of current across the device. In the second application, the MOSFET is used as a half-bridge switch in high power converters. In this context, the MOSFET will open and close in accordance with the conditions in the circuit, thus controlling the flow of current across the device.
The typical operating voltage of the SPD100N03S2L04T is 10 to 100 volts. It is mainly used as a power switch in various circuits and applications. It is designed to provide high performance and low on-resistance. Additionally, the device is designed to have a high breakdown voltage which helps protect sensitive devices from damage. Furthermore, the device is capable of providing a low gate charge which helps improve thermal performances.
The SPD100N03S2L04T also includes a variety of features which help to improve its performance. First, it is designed to have a low RDS(ON) which makes it ideal for low power applications. Additionally, the device is suitable for high speed switching as it has a fast response time and highly optimized reverse recovery characteristics. Additionally, devices come with improved thermal and EMI characteristics which help to reduce system costs. The devices also come with protection features such as short-circuit protection, over temperature protection and over voltage protection.
In summary, the SPD100N03S2L04T is a single N-channel power MOSFET with two main application fields and working principles. It is mainly used as a switch for DC-DC converters in high voltage applications and as a half-bridge switch in high power converters. The device is designed to provide high performance and low on-resistance and has a variety of features which helps to improve its performance. Additionally, the device is suitable for high speed switching and has various protection features for improved reliability.
The specific data is subject to PDF, and the above content is for reference
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