Allicdata Part #: | SPD25N06S2-40-ND |
Manufacturer Part#: |
SPD25N06S2-40 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 29A DPAK |
More Detail: | N-Channel 55V 29A (Tc) 68W (Tc) Surface Mount P-TO... |
DataSheet: | SPD25N06S2-40 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 26µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | P-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPD25N06S2-40 is a type of N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and is part of a larger family of voltage-controlled devices. It is an electrically operated device typically used as a switch or amplifier in different types of electric circuitry. It contains a source, gate and drain, and is constructed with a substrate of semiconductor material where the source and drain are formed in a series of lines which allow it to conduct current.
N-channel MOSFETs are traditionally used in small-signal amplifying and switching applications. The SPD25N06S2-40 is designed to provide low on-resistance and has a breakdown voltage of 25V, allowing it to provide efficient performance even when exposed to large voltages. It is well-suited for voltage-sensitive applications due to its relatively low static- and dynamic-channel resistance, and can be used to control both AC and DC loads. It provides fast switching speeds, allowing for low-power consumption and improved signal fidelity.
The working principle behind the SPD25N06S2-40 is fairly straightforward. By applying a voltage to the gate terminal, the transistor is switched to an “ON” state. This is possible because the gate terminal acts as a dielectric layer, which when exposed to a voltage, creates a phenomenon known as the “gate-bottleneck.” This causes the electrons to become trapped between the source and the gate terminal, creating an “ON” state. When the applied voltage is removed, the electrons are released, and the device is switched to an “OFF” state.
The SPD25N06S2-40 is an ideal transistor for a wide variety of applications, such as switching and amplifying of small-signal applications. It is especially useful for voltage-sensitive applications due to its relatively low static- and dynamic-channel resistance. It can also be used in modern, high-speed circuits due to its fast switching speeds and low-power consumption. Additionally, due to its relatively low breakdown voltage, it is well-suited for applications which may be exposed to large voltages.
In conclusion, the SPD25N06S2-40 is a type of N-Channel MOSFET which provides reliable performance and is an ideal transistor for a variety of applications. It provides low on-resistance and a low breakdown voltage, making it well-suited for voltage-sensitive applications. Furthermore, it can be used in modern, high speed circuits due to its fast switching speeds, allowing it to provide efficient performance and improved signal fidelity.
The specific data is subject to PDF, and the above content is for reference
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