![SPD50N03S207GBTMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
SPD50N03S207GBTMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPD50N03S207GBTMA1TR-ND |
Manufacturer Part#: |
SPD50N03S207GBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 50A TO252-3 |
More Detail: | N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 85µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46.5nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction |
SPD50N03S207GBTMA1 is a type of N-channel MOSFET (metal oxide semiconductor field effect transistor), which has been designed to work as a one-way switch in the electronic devices. It is a Single type FET (Field Effect Transistor) with drain to source voltage of 50V. This MOSFET has been designed to work with very high switching frequency and relatively low gate charge. The FETs (Field Effect Transistors) are powered devices with three terminals: one for the gate, one for the drain and one for the source. All these terminals have the ability to control and influence the other terminal’s functions. Therefore, FETs are excellent devices for specific switching, amplification and control purposes. |
Application field of SPD50N03S207GBTMA1 |
This FET can be used in various electronic devices. It is especially suitable for most modern battery operated devices such as mobile phones and laptop computers, as it is very low in power consumption and excellent in switching performance. It can also be used in other various fields such as industrial automation, including motor control, relays and variable speed motors. Moreover, it can be used in switching power supplies & amplifiers, valve switching, and other related areas, proving highly reliable and long-lasting operation. |
Working principle of SPD50N03S207GBTMA1 |
The basic principle of the MOSFET is the flow of electrons from the source to the drain through the gate field effect. When the gate voltage is high, the gate field effect creates an effective barrier that prevents the current from flowing through the device. When the gate voltage is lower, the barrier is reduced and the current is allowed to flow through. The source, gate and drain of the MOSFET can be used to control the current. By controlling the gate voltage, the gate field effect is adjusted, thus controlling how much current flows through the device. This makes MOSFETs very efficient at controlling and controlling the current, as the amount of current that flows can be varied without having to change the source or drain voltage. In summary, SPD50N03S207GBTMA1 has the ability to provide very low power consumption and excellent switching performance. It is widely used in mobile phones and laptop computers, industrial automation, and other related areas. It works by controlling the gate voltage and adjusting the gate field effect to control the current that flows through the device. |
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SPD50N03S207GBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TO252... |
SPD50N03S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A DPAKN... |
SPD50P03LGXT | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 50A TO-25... |
SPD50N03S2-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A DPAKN... |
SPD50N06S2L-13 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 50A DPAKN... |
SPD50N03S2L06GBTMA1 | Infineon Tec... | 0.68 $ | 2500 | MOSFET N-CH 30V 50A TO252... |
SPD50N03S2L06T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A DPAKN... |
SPD50P03LGBTMA1 | Infineon Tec... | 1.58 $ | 4971 | MOSFET P-CH 30V 50A TO-25... |
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