SPD50N03S2L06GBTMA1 Discrete Semiconductor Products

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Introduction

The SPD50N03S2L06GBTMA1 is a 60V, 30A N-channel enhanced SOT-223 MOSFET. It is designed primarily for enhanced high-side switching in digital applications. It features fast switching, a low drain-to-source on-state resistance, low gate charge, and an unclamped inductive switching (dV/dt) robustness. This device utilizes the latest high cell density trench MOSFET technology with a fully optimized design that ensures a higher efficiency and reliability.

Application Field

The SPD50N03S2L06GBTMA1 can be used for general purpose switching and power applications such as intelligent motor drives, industrial equipment and consumer appliances. It is suitable for high-side switches for lighting dimming, hot plugging ，battery control, solenoid regulators and voltage regulator modules (VRM) that require a fast, robust and easier-to-use switch device. It is also suitable for other power switching applications such as AC controllers and DC-DC converters.

Working Principle

The SPD50N03S2L06GBTMA1 is an enhanced SOT-223 MOSFET with an N-channel enhancement mode. It is constructed with a thin layer of P-type drain drift material on the drain region and a metal gate electrode over the thin layer channel. A positive gate voltage enables it to become conductive, allowing current to flow between the source and drain.

When a voltage is applied to the gate, the electrons in the thin layer are pulled towards the gate, creating a region of high concentration of electrons between the gate oxide and the drain. This makes the MOSFET ÔdoorÕ conductive, allowing electrons to flow from source to drain and current to flow from drain to source.

When the gate voltage is removed, the electrons in the thin layer are repelled, creating a region of low concentration of electrons between the gate oxide and the drain.

This makes the MOSFET ÔdoorÕ non-conductive, preventing electrons from flowing from source to drain and current to flow from drain to source.

Conclusion

The SPD50N03S2L06GBTMA1 is a 60V, 30A N-channel enhanced SOT-223 MOSFET, suitable for a variety of power switching applications. It features fast switching, low drain-to-source on-state resistance, low gate charge, and an unclamped inductive switching (dV/dt) robustness. The working principle of the device involves a gate voltage being applied to the gate to enable conductivity between the source and drain. When the gate voltage is removed, conductivity is blocked, preventing electrons from flowing from source to drain and current from flowing from drain to source.

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