| Allicdata Part #: | SPI42N03S2L-13-ND |
| Manufacturer Part#: |
SPI42N03S2L-13 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 42A I2PAK |
| More Detail: | N-Channel 30V 42A (Tc) 83W (Tc) Through Hole PG-TO... |
| DataSheet: |  SPI42N03S2L-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 37µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | PG-TO262-3-1 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30.5nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 12.9 mOhm @ 21A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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SPI42N03S2L-13 Application Field and Working Principle
The SPI42N03S2L-13 is a low on-resistance, low Vgs(th) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed by Infineon Technologies AG. This advanced transistor can be used in different applications. It was designed to provide high-speed switching with low power consumption. This article will discuss the applications and working principles of the SPI42N03S2L-13.
Applications
The SPI42N03S2L-13 is designed to provide high power output and low power consumption. It is used in various applications such as DC-DC converters, motor drives, lighting applications, power management, consumer power supplies and other power electronics. It is also suitable for automotive applications due to its low on-resistance Rds(on). Another application of the SPI42N03S2L-13 is audio amplifiers. The device is known for its low distortion, high efficiency and low power consumption which make it suitable for the audio applications. It can also be used in battery-powered systems.
Working Principle
A metal oxide semiconductor field effect transistor (MOSFET) is a type of transistor used for switching and amplifying signals. It is made up of two metal plates and an oxide layer between them. The oxide layer acts as an insulating layer when no voltage is applied to the gate of the MOSFET. However, when a voltage is applied to the gate, the oxide layer breaks down and allows electrons to flow between the source and the drain. This creates a conducting channel within the oxide layer.
The SPI42N03S2L-13 is a type of MOSFET which uses an insulated gate to control the current flowing between the source and the drain. By applying a voltage to the gate, the current flow between the source and the drain can be increased or decreased. Additionally, the device can be used in a “pusher-puller” configuration to switch a large amount of current.
In addition to acting as a switch and amplifier, the SPI42N03S2L-13 can also be used for voltage regulation. When a voltage is applied to the gate, it adjusts the current flow between the source and the drain. This can be used to regulate the output voltage.
Conclusion
The SPI42N03S2L-13 is a low on-resistance, low Vgs(th) MOSFET designed by Infineon Technologies AG. This advanced transistor can be used in different applications such as DC-DC converters, motor drives, lighting applications, power management, consumer power supplies and other power electronics. It is also suitable for audio amplifiers and battery-powered systems due to its low distortion, high efficiency and low power consumption. The working principle of the SPI42N03S2L-13 is based on the changing of the current flow between the source and the drain when a voltage is applied to the gate. This allows it to be used for switching, amplifying, and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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