SPI47N10L Allicdata Electronics
Allicdata Part #:

SPI47N10L-ND

Manufacturer Part#:

SPI47N10L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 47A I2PAK
More Detail: N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-...
DataSheet: SPI47N10L datasheetSPI47N10L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 2mA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 175W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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SPI47N10L - Application Field and Working Principle

The SPI47N10L is a low-voltage, high performance Strain Gate Field-Effect Transistor (STFET) that is designed to reduce power loss and increase efficiency during operation. It is a single-gate device and is commonly used in power supplies and switching power amplifiers. This device has a number of applications and is suitable for switching and linear circuits, as well as high-impedance and low-noise circuits.

The SPI47N10L is manufactured using the most advanced semiconductor technology, which allows it to provide highly reliable performance. The device features a slim body, which helps to reduce the size of the board and allows for minimal space and power requirements. It also features a rugged gate oxide which helps to reduce the failure rate of the chip and also improve system reliability and durability. The device’s low-voltage design allows for efficient operation at higher frequencies and lower voltages, which results in increased power output.

The N-channel SPI47N10L operates on a Drain-Source voltage between 0.3 and 10V, making it suitable for a wide variety of applications. It has a Drain-Source resistance of 0.8Ω and an Drain-Source capacitance of 0.35pF. It also includes a gate oxide to protect the device from high-voltage or high-frequency gates. The SPI47N10L has an input capacitance of 1000pF, a power rating of 20V, and a current rating of 1.7A.

The SPI47N10L is a single-gate field-effect transistor and its operation is based on the four-layer structure of semiconductors. The device has four layers; the “source” and “drain” regions are typically formed from silicon, while the gate and body materials may be aluminum, polysilicon, or silicon dioxide. When voltage is applied to the gate, it creates an inversion layer between the source and drain regions, allowing a current to flow. The device follows the same principles as other field-effect transistors, but uses its four-layer structure to improve its efficiency, performance, and reliability.

The SPI47N10L is designed for electronic applications such as low noise audio amplifiers, power supplies, and switching power amplifiers. It is particularly well-suited for use in switching and linear circuits, as it can provide higher speed and higher output power than other field-effect transistors. The device\'s low-voltage design also make it a great choice for high-impedance, low-noise applications. Additionally, its slim body helps reduce board size and power requirements, making it ideal for portable devices.

The SPI47N10L is a single-gate, low-voltage, high-performance STFET that is used in many applications. Its four-layer structure helps to increase efficiency and performance, while its low-voltage design allows for efficient operation at higher frequencies and lower voltages. This helps to increase the power output of the device, making it an ideal choice for a variety of applications, such as low noise audio amplifiers, power supplies, and switching power amplifiers. The device’s slim body helps to reduce board size and power requirements, making it suitable for portable devices.

The specific data is subject to PDF, and the above content is for reference

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