SPS01N60C3

Vgs(th) (Max) @ Id:	3.9V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	PG-TO251-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	11W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	800mA (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The SPS01N60C3 is a type of field-effect transistor (FET) designed for a wide range of applications, including switching, voltage regulation, and signal control. FETs are a type of solid-state switch that uses an electric field to generate a current or voltage, rather than direct current from a power source. This type of transistor is characterized by its low resistance, high operating temperature, and high switching speed.The SPS01N60C3 is a single-gate MOSFET, which is a type of field-effect transistor that uses a metal-oxide-semiconductor (MOS) gate structure to control current flow. A single-gate MOSFET has only one gate connecting the source and the drain of the transistor. This method of controlling current is less complex and more efficient than the traditional resistor-based method.The SPS01N60C3 is designed to be a low-resistance, high-performance transistor. The low-resistance design allows for higher switching speeds, greater current capacities, and fewer wires used in the design. The high-performance design improves efficiency by reducing undesirable switching effects, such as static power losses or voltage drops. The SPS01N60C3 has a maximum power dissipation rating of 50 watts and can operate at temperatures of up to 175 degrees Celsius.The SPS01N60C3 can be used in a variety of applications, ranging from simple signal control to complex power-switching applications. It is well-suited for switching high-current loads such as motors or solenoids. It is also well-suited for use in voltage regulation circuits, providing stable voltage regulation over varying loads.The SPS01N60C3 is a great choice for many applications due to its low cost, high performance, and small size. It can also be used in applications requiring high switching speeds and high temperatures, such as automotive and industrial applications. Its low-resistance design and high performance make it a great choice for applications requiring high switching speed and current capacity.The working principle of the SPS01N60C3 is based on the MOSFET’s gate structure. The gate is connected to the source and the drain of the transistor, and is controlled by the voltage applied to it. When a voltage is applied to the gate, current can flow through the channel between the source and the drain. The resistance of the channel can be varied by the voltage applied to the gate, which allows the device to be used as a switch or a regulator.To summarize, the SPS01N60C3 is a low-resistance, high-performance field-effect transistor that can be used in a variety of applications. It is a single-gate MOSFET, which means it only has one gate connecting the source and the drain of the transistor. The SPS01N60C3 is designed for high-current applications, providing high switching speeds and high temperatures to ensure reliable performance. Its simple gate structure allows for efficient current control, and its low-resistance design allows for higher current capacities and fewer wires used in the design.

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