SPS02N60C3 Allicdata Electronics
Allicdata Part #:

SPS02N60C3-ND

Manufacturer Part#:

SPS02N60C3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 1.8A TO251-3
More Detail: N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-...
DataSheet: SPS02N60C3 datasheetSPS02N60C3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The SPS02N60C3 is a 600 volt, 55 amp, N-channel power MOSFET produced by STMicroelectronics. It can be used as either a switch or an amplifier. The SPS02N60C3 is part of ST\'s series of PowerMESH MOSFETs, a technology that combines MOSFET performance with bipolar power sensing.

The SPS02N60C3 has a drain-source voltage rating of 600 volts, a drain current rating of 55 amps and a drain-source on resistance of 2.8 milliohms. It is also rated for a continuous drain current rating of 180 watts and a total power dissipation of 630 watts. It has a high performance, low-noise level and a low internal drain-body capacitance, making it an ideal choice for use in switching applications.

The SPS02N60C3 is suitable for applications such as DC-DC converters, power supplies, motor control and lighting applications such as street lights and halogen lamps. It is also commonly used in power amplifiers, power switches and high-performance differential amplifiers. It is an optimal choice for applications requiring high power dissipation, low on resistance and reduced noise.

The SPS02N60C3\'s working principle is based on a MOSFET device structure. A MOSFET is a three-terminal device consisting of a source, a drain, and a gate. When a positive voltage is applied to the gate, it modulates the voltage on the source-drain channel, allowing current to flow. When the voltage on the gate is reduced, the current flow is suppressed. This modulation of the current flow is what enables a MOSFET to operate as a switch or an amplifier.

The SPS02N60C3 has been designed for maximum performance and reliability. It features a tight body-drain diode-to-channel capacitance tolerance, which ensures reliable switching and fast recovery times. The device also features ST\'s patented PowerMESH technology, which ensures a strong body feedback network and provides a low noise current switching performance. The combined features of the SPS02N60C3 make it a trusted product for high power applications.

In conclusion, the SPS02N60C3 is a high performance, low-noise, N-channel power MOSFET. Its high power dissipation, low on resistance and reduced noise make it an ideal choice for high power applications such as DC-DC converters, power supplies, lighting and power amplifiers. It is also commonly used in power switches, high-performance differential amplifiers and motor control applications. The SPS02N60C3\'s working principle is based on a MOSFET structure, and its tight body-drain diode-to-channel capacitance tolerance and ST\'s PowerMESH technology make it a trusted product for high power applications.

The specific data is subject to PDF, and the above content is for reference

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