Allicdata Part #: | SPS02N60C3-ND |
Manufacturer Part#: |
SPS02N60C3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 1.8A TO251-3 |
More Detail: | N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-... |
DataSheet: | SPS02N60C3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 80µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPS02N60C3 is a 600 volt, 55 amp, N-channel power MOSFET produced by STMicroelectronics. It can be used as either a switch or an amplifier. The SPS02N60C3 is part of ST\'s series of PowerMESH MOSFETs, a technology that combines MOSFET performance with bipolar power sensing.
The SPS02N60C3 has a drain-source voltage rating of 600 volts, a drain current rating of 55 amps and a drain-source on resistance of 2.8 milliohms. It is also rated for a continuous drain current rating of 180 watts and a total power dissipation of 630 watts. It has a high performance, low-noise level and a low internal drain-body capacitance, making it an ideal choice for use in switching applications.
The SPS02N60C3 is suitable for applications such as DC-DC converters, power supplies, motor control and lighting applications such as street lights and halogen lamps. It is also commonly used in power amplifiers, power switches and high-performance differential amplifiers. It is an optimal choice for applications requiring high power dissipation, low on resistance and reduced noise.
The SPS02N60C3\'s working principle is based on a MOSFET device structure. A MOSFET is a three-terminal device consisting of a source, a drain, and a gate. When a positive voltage is applied to the gate, it modulates the voltage on the source-drain channel, allowing current to flow. When the voltage on the gate is reduced, the current flow is suppressed. This modulation of the current flow is what enables a MOSFET to operate as a switch or an amplifier.
The SPS02N60C3 has been designed for maximum performance and reliability. It features a tight body-drain diode-to-channel capacitance tolerance, which ensures reliable switching and fast recovery times. The device also features ST\'s patented PowerMESH technology, which ensures a strong body feedback network and provides a low noise current switching performance. The combined features of the SPS02N60C3 make it a trusted product for high power applications.
In conclusion, the SPS02N60C3 is a high performance, low-noise, N-channel power MOSFET. Its high power dissipation, low on resistance and reduced noise make it an ideal choice for high power applications such as DC-DC converters, power supplies, lighting and power amplifiers. It is also commonly used in power switches, high-performance differential amplifiers and motor control applications. The SPS02N60C3\'s working principle is based on a MOSFET structure, and its tight body-drain diode-to-channel capacitance tolerance and ST\'s PowerMESH technology make it a trusted product for high power applications.
The specific data is subject to PDF, and the above content is for reference
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