Allicdata Part #: | SPW11N60C3FKSA1-ND |
Manufacturer Part#: |
SPW11N60C3FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11A TO-247 |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPW11N60C3FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
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The SPW11N60C3FKSA1 power MOSFET is specially designed for use in applications that require high power levels, high-frequency operation, and efficient conversion of power from one form to another. It is a three-terminal device that acts as a variable current source or as an electronic switch between two voltage supplies. The SPW11N60C3FKSA1 is suitable for various applications such as high-current DC-DC converters, high-frequency power supplies and enabling circuits.
The SPW11N60C3FKSA1 is constructed using an advanced process technology that combines robust performance with low gate threshold voltage and high on-resistance. This technology provides an improved level of power efficiency, increased power handling capability, and higher voltage isolation. The device also has a low gate capacitance that helps to reduce switching losses.
The SPW11N60C3FKSA1 power MOSFET is a unipolar device with three terminals, a Gate, a Source and a Drain. The Gate is used to control the flow of electrons between the Source and the Drain. The Gate width and the applied Gate voltage determine the size of the electrical current that is allowed to flow from the Source to the Drain. When a positive Gate voltage is applied to the device, the drain current passes through the device, turning it ON. The device then operates in saturation. Applying a negative Gate voltage to the device will reverse the current flow and turn the device OFF.
The SPW11N60C3FKSA1 also provides a high level of protection against electrostatic discharge, with an ESD tolerance above 8kV. This ensures that the device is protected from unintentional damage due to electrostatic discharges.
The applications of the SPW11N60C3FKSA1 power MOSFETs include DC-DC converters, switching regulators, motor drives, electric power supplies, and power amplifiers. This device is also commonly used in industries for its high-current, high-frequency and efficient power control.
The SPW11N60C3FKSA1 is also ideal for a variety of other applications. It can be used as an active component in communications amplifiers and other circuits, as well as an AC switch in AC motors and power supplies. It is also suitable for low-noise, low-power analog and digital circuits.
The advantages of the SPW11N60C3FKSA1 power MOSFET include its low gate threshold voltage, high on-resistance, low gate capacitance, and ESD protection. The device operates at high frequencies and is capable of producing high efficiency power conversion. The device also has a relatively low cost and is available in small packages.
The SPW11N60C3FKSA1 is a versatile power MOSFET that can be used in a wide range of applications in both consumer and industrial settings. It is an ideal solution for power conversion, switching and control applications that require high-power levels, high-frequency operation, and efficient conversion of power from one form to another.
The specific data is subject to PDF, and the above content is for reference
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