SPW15N60CFDFKSA1 Allicdata Electronics
Allicdata Part #:

SPW15N60CFDFKSA1-ND

Manufacturer Part#:

SPW15N60CFDFKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 13.4A TO-247
More Detail: N-Channel 650V 13.4A (Tc) 156W (Tc) Through Hole P...
DataSheet: SPW15N60CFDFKSA1 datasheetSPW15N60CFDFKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
FET Feature: --
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3
Description

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The SPW15N60CFDFKSA1 is a power MOSFET transistors suitable for high power switching applications. It has a high current-handling capacity, a low switch-on resistance, and a low thermal resistance. Its maximum drain-source voltage rating (Vds) is 600V and its continuous drain current rating (Id) is 15A.

The SPW15N60CFDFKSA1 is an N-channel, 600V, 15A, Enhancement-mode MOSFETs with advanced process technology. This device is specially designed for limited space application like TV, OA, lighting ballast and telecom system. It is also suitable for high power supply applications such as AC/DC converters, battery pack, PFC and UPS.

MOSFETs are featured with their low-on resistance, low gate drive power requirement and high switching speed. As a result, they are widely used in high-power switching applications due to their high current-handling capacity, low switch-on resistance, low thermal resistance, high reliability, and long lifetime.

Working Principle of SPW15N60CFDFKSA1

The SPW15N60CFDFKSA1 is a MOSFET transistor composed of a semiconductor channel between the source and drain terminals. When the gate voltage is applied, the channel forms beneath the gate and increases the conductivity from the source to the drain. This is called “enhancement” mode of operation. Thus, the MOSFET transistor acts like an electronic switch, which can be used to control the flow of current.

When the gate voltage is lowered, the MOSFET turns off and blocks current flow, making the device a normally “open” (high impedance) switch. The SPW15N60CFDFKSA1 has a maximum drain-source voltage (Vds) rating of 600V, a maximum drain current (Id) rating of 15A and an on-state resistance (Rds) rating of only 0.062ohm.

Conclusion

The SPW15N60CFDFKSA1 is a high-power MOSFET transistor suitable for high power switching applications. It has a high current-handling capacity, a low switch-on resistance, and a low thermal resistance. It is designed for limited space applications like TVs, OA, lighting ballast and telecom systems, as well as for high power supply applications such as AC/DC converters, battery packs, PFC and UPS. When the gate voltage is applied, the channel forms beneath the gate and increases the conductivity from the source to the drain. This device acts as an electronic switch, allowing control of the current flow.

The specific data is subject to PDF, and the above content is for reference

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