SQ4401EY-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ4401EY-T1_GE3TR-ND

Manufacturer Part#:

SQ4401EY-T1_GE3

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 17.3A
More Detail: P-Channel 40V 17.3A (Tc) 7.14W (Tc) Surface Mount ...
DataSheet: SQ4401EY-T1_GE3 datasheetSQ4401EY-T1_GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.92000
10 +: $ 0.89240
100 +: $ 0.87400
1000 +: $ 0.85560
10000 +: $ 0.82800
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.14W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQ4401EY-T1_GE3 MOSFET is a JEDEC registered single N-Channel enhancement-mode device developed specifically for use in power management, high-speed switching and amplifying applications. From an electrical perspective, this type of MOSFET is a voltage-controlled device where the varying of a gate voltage can cause the current between the source and drain to get controlled. In addition, having the correct combination of gate-source voltage and operating temperature range can cause the device to have different bias formations such as enhancement, depletion and saturation.

A MOSFET’s characteristics are mainly determined by the gate electric field intensity, and the overlap of the source-drain depletion region and the gate control electric field. Due to their characteristics, a MOSFET can be considered as an ‘ideal switch’ thanks to its resonance-free operations and high-current/voltage ratio. This can make the SQ4401EY-T1_GE3 suitable and ideal for use in applications such as inverters, motor control, digital power supply, solenoids and other applicable components.

When compared to similar MOSFETs, the SQ4401EY-T1_GE3 is known for offering one of the highest on-state currents available, with up to 11 A at 125 °C and 14 A at 25 °C junction temperatures for a 1-milliamp gate current. Furthermore, this device also has a very low gate-voltage sensitivity, which ensures frequency stability, supplying 3.2 mA/°C gate leakage current, 1.8 V gate-to-source threshold voltage and 983 mV/°C drain-source conductance.

Even though the SQ4401EY-T1_GE3 can offer a high-level of performance and reliability, it is important to note that certain measures must be taken in order to use it properly. For instance, when dealing with the device, its gate pins are very sensitive, and a static shock in the gate area can cause a permanent damage to the MOSFET. Additionally, given its high power capability, the usage of a suitable heat-sink is extremely important to ensure its proper operation, since the device alone does not have a satisfactory thermal resistance.

The SQ4401EY-T1_GE3 MOSFET works by using a number of different principles. The device works by creating an electric field in the gate region between the gate and the source points. When the gate electric field is strong enough, it will cause a current to flow from the source to the drain, while the amount of current will be directly proportional to the amount of electric field applied. This type of MOSFET is beneficial in many applications, since it allows for fast switching and a wide range of current and voltage control.

The SQ4401EY-T1_GE3 MOSFET is a great choice for power management and high-speed switching applications because of its excellent electrical characteristics. This type of MOSFET offers high on-state currents, low gate-voltage sensitivity and high-current/voltage ratio, which makes it ideal for use in inverters, motor control, digital power supplies, solenoids and other applicable components. Despite its tremendous performance, it is important to use the device properly in order to avoid any potential damage or malfunction.

The specific data is subject to PDF, and the above content is for reference

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