SQ4431EY-T1_GE3 Discrete Semiconductor Products

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The SQ4431EY-T1_GE3 is a N-Channel enhancement mode Field Effect Transistor (FET) that can be used to switch electric currents on and off in a circuit. This type of transistor is popular in computing, audio, and radio applications such as amplifiers, amplifiers with priority controls, bandpass amplifiers, voltage-controlled oscillators, and RF switches. It is commonly used in power control applications, such as in the construction of high-power amplifiers and power supply units. This type of transistor is typically used to control large currents of up to 10 amperes.

The working principle of the SQ4431EY-T1_GE3 is the same as other FETs. This type of transistor is a three-terminal active device that requires a small signal applied between the gate and source terminals in order to control or switch the current flow from the source to the drain. The gate is the control terminal, and it applies an electrical field to the N-type semiconductor material on the source side, which later gets to the drain side.

The fabricator of the SQ4431EY-T1_GE3 FET is Vishay / Siliconix and the package type is TO-220AB. The device works in a voltage range of -55 to 175 V and has a maximum continuous drain current of 10 A. The maximum peak drain current can reach 40 A while operating at a temperature of 125 °C or lower. Moreover, the device features a threshold voltage VGS(th) of -4.5 V and a drain-source on-resistance RDS(on) of 4.4 Ohms. Additionally, its switching speed is quite fast in the range of 20-30 ns.

The SQ4431EY-T1_GE3 can be used in a range of applications including high-power amplifiers and power supply units. It can also be used in switching regulators and H-bridges. It is suitable for switching control of high-voltage circuits with moderate to high power requirements. It is widely used in audio and radio applications such as amplifiers, amplifiers with priority controls, bandpass amplifiers, voltage-controlled oscillators, and RF switches.

In summary, the SQ4431EY-T1_GE3 is an N-Channel enhancement mode FET. It is able to control large currents of up to 10 amperes and operates in a voltage range of -55 to 175 V and a maximum continuous drain current of 10 A. Its working principle is the same as other FETs where a small signal between the gate and source terminals is used to switch the current flow from the source to the drain. It can be used in a range of applications such as high-power amplifiers, power supply units, switching regulators, and H-bridges. It is also used in audio and radio applications such as amplifiers, amplifiers with priority controls, bandpass amplifiers, voltage-controlled oscillators, and RF switches.

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