| Allicdata Part #: | SQD30N05-20L_GE3-ND |
| Manufacturer Part#: |
SQD30N05-20L_GE3 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 55V 30A TO252 |
| More Detail: | N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-2... |
| DataSheet: |  SQD30N05-20L_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.43818 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1175pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SQD30N05-20L_GE3 is a 30V N-channel MOSFET with a maximum drain current of 20A and a maximum drain source voltage of 30V.
Application Field
The SQD30N05-20L_GE3 is most commonly used as a switch in motor control applications. It offers low on-resistance and high turn-on speed, making it ideal for quickly and efficiently turning on and off loads such as servo motors or brushless DC motors. It can also be used in high-power applications such as power supplies or AC switching systems where fast and reliable switching is required.
The SQD30N05-20L_GE3 is also commonly used in low-power switching applications, such as in logic-level controls and circuit protection circuits. Due to its low gate threshold voltage and low input capacitance, it can be used to control and protect low-voltage circuits that do not require high power.
Working Principle
The SQD30N05-20L_GE3 is a semiconductor device that uses the principle of electrostatic attraction to turn on and off. When a voltage is applied to the gate electrode of the MOSFET, the charge carriers (electrons or holes) are attracted from the source terminal to the drain terminal, creating a conductive channel through which current can flow. The gate voltage controls the size of the conductive channel and thus the amount of current that can flow through it.
The SQD30N05-20L_GE3 also has an incredibly fast turn-off time, which makes it extremely useful for high-speed switching applications. This is because its body diode prevents the flow of current from the drain to the source as soon as the gate voltage is removed. Furthermore, due to its low on-resistance, the MOSFET will not overheat even when used at high current densities.
Conclusion
The SQD30N05-20L_GE3 is a 30V N-channel MOSFET that is most commonly used as a switch in motor control and low-power switching applications. It offers low on-resistance and high turn-on and turn-off speeds, making it ideal for high-speed switching applications. Additionally, due to its low gate threshold voltage and low input capacitance, it can be used to control and protect low-voltage circuits that do not require high power.
The specific data is subject to PDF, and the above content is for reference
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