| Allicdata Part #: | SQD35N05-26L-GE3-ND |
| Manufacturer Part#: |
SQD35N05-26L-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 55V 30A TO252 |
| More Detail: | N-Channel 55V 30A (Tc) 50W (Tc) Surface Mount TO-2... |
| DataSheet: |  SQD35N05-26L-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1175pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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SQD35N05-26L-GE3 is a power metal-oxide-semiconductor field-effect transistor (MOSFET). It is a Dual-N channel MOSFET with the maximum drain source voltage (Vds) of 130V. It belongs to 3rd generation super-junction technology and is based on power 600V vertical power MOSFETs. It is used primarily in power converters of various applications such as home appliances, power tools, motor control and automotive. It features a Zero Cross-Loss Technology and can achieve an efficiency of up to 97%.
A MOSFET is a three terminal device with a metal gate whose purpose is to control the current flow from the source to the drain. It works on the principle of the creation of electric field by the presence of metal gate. The metal gate changes the conductivity of the channel thus allowing control of current flow. SQD35N05-26L-GE3 works on the same principle but based on vertical power MOSFETs which offer a higher Vds and a lower resistance.
SQD35N05-26L-GE3 is also equipped with Zero Cross-Loss technology which allows it to operate in zero switching losses. This makes it more efficient and suitable for applications which require high efficiency. It is also designed to reduce the thermal resistance and has wide current ratings. It is designed to operate in temperatures ranging from -40 to 125 degree Celsius and can handle surge currents up to 25A. SQD35N05-26L-GE3 is also RoHS compliant, exempt from Halogen and Antimony based fire protection.
SQD35N05-26L-GE3 is mainly used in home appliances, power tools, motor control and automotive. It is suitable for a variety of applications such as, but not limited to, UPS, switch-mode power supply, home appliances, motor drives, inverters and solar controllers.
In summary, SQD35N05-26L-GE3 is a Dual-N channel MOSFET based on 3rd generation super-junction technology and offers a Vds of 130V. It is equipped with Zero Cross-Loss technology which allows it to switch in zero losses and high efficiency and it is suitable for various applications in home appliances, power tools and automotive.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SQD35N05-26L-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 55V 30A TO252... |
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