| Allicdata Part #: | SQD90P04-9M4L_GE3TR-ND |
| Manufacturer Part#: |
SQD90P04-9M4L_GE3 |
| Price: | $ 0.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 40V 90A TO252AA |
| More Detail: | P-Channel 40V 90A (Tc) 136W (Tc) Surface Mount TO-... |
| DataSheet: |  SQD90P04-9M4L_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.79225 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 136W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6675pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SQD90P04-9M4L_GE3 is a state-of-the-art MOSFET designed for a wide variety of applications. It has a maximum drain current rating of 90A and a drain-source voltage rating of 40V. The maximum junction temperature spec is 225°C. It is a single N-Channel Enhancement-mode MOSFET with a maximum on-resistance of 4mΩ at gate voltage of 10V and drain current of 66A. It has an integrated gate ESD protection and an integrated body diode.
The application field of SQD90P04-9M4L_GE3 is quite wide, thanks to its rapid switching speed, high operating efficiency and low on-resistance. It is suitable for a variety of high side load switch and low-side load switch applications in a wide range of DC-DC, Power Distribution and SMPS applications. It can also be used to control the flow of current in electronic circuits or to switch signals. It can be used in automotive, lighting, communications and industrial applications, among others.
The working principle of SQD90P04-9M4L_GE3 is based on the MOSFET’s ability to act as an effective switch for both AC and DC current. By properly controlling the gate-source voltage, the current that flows through the drain-source channel can be quickly and efficiently modified. The higher the gate-source voltage, the greater the drain current that can achieve. When the gate-source voltage is reduced, the drain current will decrease. This way, the MOSFET can be used to control the drain current and effectively switch it on and off as desired.
The SQD90P04-9M4L_GE3 is an ideal choice for a wide variety of applications. It is capable of delivering high levels of power and current with low on-resistances. It also has fast switching speed and high operating efficiency, making it a dependable choice for all kinds of DC-DC, Power Distribution, and SMPS applications. Its integrated gate ESD protection and integrated body diode ensure its longevity and reliability. Therefore, it is considered as an excellent choice for power, automotive, lighting, communications, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SQD90P04-9M4L_GE3 | Vishay Silic... | 0.88 $ | 1000 | MOSFET P-CH 40V 90A TO252... |
| SQD97N06-6M3L_GE3 | Vishay Silic... | 0.55 $ | 1000 | MOSFET N-CH 60V 50A TO252... |
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