| Allicdata Part #: | SQD97N06-6M3L_GE3-ND |
| Manufacturer Part#: |
SQD97N06-6M3L_GE3 |
| Price: | $ 0.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 50A TO252 |
| More Detail: | N-Channel 60V 97A (Tc) 136W (Tc) Surface Mount TO-... |
| DataSheet: |  SQD97N06-6M3L_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.49447 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 136W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6060pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SQD97N06-6M3L_GE3 is an advanced N-channel MOSFET (metal oxide semiconductor field-effect transistor) which features an integrated high power level and excellent performance, as well as low on resistance, high-speed switching and reverse current. It is applicable for many switching applications such as motor control, resonant converter, H-bridge motor driver, DC-DC converter and LED backlighting.
SQD97N06-6M3L_GE3 is a three-pin device, with gate (G), drain (D) and source (S) terminals. The gate is used to control the transistor, by applying a control voltage at the gate with respect to the source. The drain and source of the SQD97N06-6M3L_GE3 are connected to the load, and when the gate is forward biased, the drain-source current will flow. When the gate is reverse biased, the drain-source current is blocked.
This MOSFET employs an advanced vertical structure, which offers excellent performance over a wide temperature range, good stability and high efficiency in switching applications. Additionally, the built-in carrier storage features enhance the switching speed and reduce the switching loss, allowing for high-frequency switching applications.
SQD97N06-6M3L_GE3 is a popular choice for applications requiring low on resistance, high-speed switching and reverse current. It can be used for switching applications such as motor control, resonant converter, H-bridge motor driver, DC-DC converter and LED backlighting. It also features a bootstrap Schottky diode, which allows high-voltage switching up to 600V. Additionally, SQD97N06-6M3L_GE3 has a low drain-source on-resistance of 6 milliohms, which makes it an ideal device for low voltage applications.
In conclusion, SQD97N06-6M3L_GE3 is a high-performance N-channel MOSFET which is suited for a wide range of switching applications. Its advanced vertical structure and built-in carrier storage features make it ideal for high-frequency switching applications, while its low on resistance and reverse current capability make it suitable for low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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