| Allicdata Part #: | SQJ848EP-T1_GE3-ND |
| Manufacturer Part#: |
SQJ848EP-T1_GE3 |
| Price: | $ 0.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 47A POWERPAKSO-8 |
| More Detail: | N-Channel 40V 47A (Tc) 68W (Tc) Surface Mount Powe... |
| DataSheet: |  SQJ848EP-T1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.49295 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 10.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SQJ848EP-T1_GE3 is a type of single p-channel MOSFET which stands for Metal-Oxide-Semiconductor Field Effect Transistor. It is a voltage-controlled device that can be used for a variety of applications and is a great choice for high power applications. This type of transistor is available in both through-hole and surface mount packages, and it offers a number of benefits in comparison to other devices.
The main application field for the SQJ848EP-T1_GE3 is power systems such as power supplies, motors, and other high power systems. This type of MOSFET can be used in switching applications as well as in amplifiers. It is also suitable for use in high speed logic gates, and other similar circuits.
The working principle of the SQJ848EP-T1_GE3 is based on its ability to control the voltage between the source and the drain by use of a gate. When the gate is given a positive voltage, it attracts the electrons to the source, which allows current to flow through the device. When the gate voltage is reduced, the electrons are repelled away and the device is turned off. As a result, it can be used in switching applications as well as amplifying purposes.
The SQJ848EP-T1_GE3 has a low On-resistance and is capable of handling very high current flows. It has been designed for use in high power applications and has the ability to handle large voltage swings. It also has a relatively fast switching time so it can be used in high speed logic applications.
The SQJ848EP-T1_GE3 is also resistant to thermal cycling and hot carrier injection. This means that it can be used in applications where thermal cycling or hot carrier injection is a concern. It is also rated at a maximum junction temperature of 150°C. This provides superior performance in applications where high temperatures are encountered.
The SQJ848EP-T1_GE3 is a reliable, efficient, and cost-effective MOSFET which makes it an ideal choice for use in a variety of power systems and other applications. It has low On-resistance, fast switching times, and is thermally stable and resistant to high temperatures. It is available in both through-hole and surface mount packages, so it can be used in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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