SQJ858AEP-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2450pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	6.3 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	58A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The SQJ858AEP-T1_GE3 is a 60V N-channel enhancement mode field effect transistor (FET). This type of FET is a three terminal semiconductor device used primarily in amplifying or switching applications. This device provide very high input impedance due to the development of an electric field that controls the current flow. Its wide range of applications make it a very versatile device.</p><p>The SQJ858AEP-T1_GE3 is used in amplifying and switching applications. It can be found in switch/amplifier circuits, logic circuits and in data processing applications. It also finds applications in power electronics such as power supplies, DC-DC converters and power amplifiers. For example, in power amplifiers, the SQJ858AEP-T1_GE3 can be used to adjust the current flow in different stages of power amplification.</p><p>The operation of the SQJ858AEP-T1_GE3 is based on the principle of electrostatic current control. This principle states that a voltage applied to a gate can be used to control the current flow in the FET channel. Depending on the voltage applied to the gate, the device can either be in an on state or in an off state. In the on state, the gate voltage will be sufficient to create an electric field that will force the current to flow through the FET channel. In the off state, the gate voltage will be too low to cause a current flow in the FET channel.</p><p>The SQJ858AEP-T1_GE3 also features an enhanced temperature stability, wide gate-source voltage range, high current handling capability and low on-resistance. All these features make the device extremely suitable for voltage and current regulation applications in industrial, medical and consumer electronic applications.</p><p>The SQJ858AEP-T1_GE3 can be used in the most common FET amplifier configurations such as source-follower, common-source, common-gate and cascode. Depending on the design of the amplifier, the voltage gain or current gain will depend on the relationship between the gate-source and drain-source voltages. In addition, the device is also compatible with low power logic circuits and can be used in various switch/amplifier circuits.</p><p>In summary, the SQJ858AEP-T1_GE3 is a versatile and reliable single N-channel enhancement mode FET. It has a wide range of applications in amplifying and switching circuits, power supplies, DC-DC converters, power amplifiers and low power logic circuits. It is highly suitable for voltage and current regulation tasks in industrial, medical and consumer electronic applications due to its high current handling capability, temperature stability, low on-resistance and wide gate-source voltage range.</p>

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