SQJB42EP-T1_GE3

Series:	Automotive, AEC-Q101, TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 25V
Power - Max:	48W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SO-8 Dual
Supplier Device Package:	PowerPAK® SO-8 Dual

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SQJB42EP-T1_GE3 Arrays Application Field and Working PrincipleArrays are electronic components that are composed of several individual components, such as transistors, capacitors or resistors, connected in a specific manner to achieve a desired function. The SQJB42EP-T1_GE3 arrays provide full custom bi-directional digital inputs and outputs, full power supply design flexibility and an optional digital transient voltage suppression feature.Application FieldThe SQJB42EP-T1_GE3 arrays can be used in a variety of applications. It is an ideal choice for applications that require a combination of power and signal lines, such as communication devices, medical devices, motor control systems, industrial automation, and automotive. The SQJB42EP-T1_GE3 arrays are designed to meet the requirements of devices used in these applications, such as protection from excessive either input or output protection, increasing current or power handling, or providing a constant current output.The SQJB42EP-T1_GE3 arrays are also popular in highly demanding environments where reliable operation is essential, such as aerospace and military applications. This includes applications that are exposed to harsh environmental conditions, such as extreme temperatures or vibration, as well as those which require high levels of electrical noise and electromagnetic interference immunity.Working PrincipleThe SQJB42EP-T1_GE3 arrays employ a fully depleted silicon-on-insulator process to achieve performance levels. This process allows for a very small surface area for larger features, which helps to decrease power consumption, increase the frequency of operation, and reduce electrostatic and electromagnetic susceptibility.The arrays operate on a self-biasing principle, using external power supplies to adjust the channel operation. This enables them to work in a wide range of operating conditions with minimal external components. The chip is designed to provide a high-density power device, which is suitable for multiple applications.The SQJB42EP-T1_GE3 arrays are also designed for advanced protection features. This includes integrated built-in over-current and over-voltage protection, as well as advanced voltage transient suppression. Additionally, the arrays can be configured to support a wide range of on-chip diagnostics, such as self-test, monitor, and control operations.The SQJB42EP-T1_GE3 arrays offer high performance, low power consumption, and a high level of system integration. They are also designed to be very reliable in a variety of applications, making them ideal for a wide range of industrial and consumer applications.

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