Allicdata Part #: | SQJB60EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJB60EP-T1_GE3 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 60V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 30A (Tc) 48W S... |
DataSheet: | SQJB60EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.31646 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Power - Max: | 48W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJB60EP-T1_GE3 is a connection advanced power module, which is developed and produced by Shanghai QiJia Electronics Co. It is a kind of FET array and belongs to the field of transistors, MOSFETs and arrays. Its application field and working principle are introduced as follows.
Application field
The SQJB60EP-T1_GE3 is the most advanced connection rated voltage module, composed of multiple high and low side secure mos tubes. It is suitable for the overcurrent and short circuit protection of the mot internal control system. It has high reliability and robustness, and can be operated stably for a long time in the harsh environments of temperature and humidity. It can be applied in the fields of car, motorcycle, scooters, ships, etc.
Working Principle
The working principle of the SQJB60EP-T1_GE3 connection advanced power module is based on the principle of MOSFET Array. It is composed of multiple individual MOSFETs, which are connected in parallel to obtain high current capacity and improved power dissipation. The working principle of the MOSFET array consists of several components including a power source, an inductor, a diode, and a capacitance. The inductor helps to protect the power source from the current overloading while the diode and capacitance support the current flow. The overall switching performance of SQJB60EP-T1_GE3 can be adjusted by adjusting these components.
When the power switch is activated, current will be stored in the inductor, then it will be discharged through the MOSFET array. The stored current will create a voltage difference between the gate and source which will allow current to flow from the drain to the source. The current will change with the MOSFET’s on-state resistance. The MOSFET will then turn off and the current released from the inductor will start to be stored in the capacitance. The only way the current can be dissipated is by dissipating its energy through the MOSFET array. The voltage of the capacitance will decrease until the MOSFET turns off again, and the cycle begins again.
In conclusion, the SQJB60EP-T1_GE3 connection advanced power module is a type of MOSFET array which consists of multiple high and low side secure MOSFETs. It has high reliability and robustness and is mainly used for overcurrent and short circuit protection of motor internal control systems. Its working principle is based on the principle of MOSFET Array and can be adjusted by adjusting the inductor, diode, and capacitance components.
The specific data is subject to PDF, and the above content is for reference
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