SQJB90EP-T1_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A SQJB90EP-T1_GE3 is a vertical double-gate N-channel MOSFET array. It is designed for use as a compact and economical means of serving high-voltage switching applications. It can be used in a wide range of applications, including power management and motor control systems, high-speed switching and data acquisition, electronic security systems, power transmission and distribution, and amplifier control.

Applications

The SQJB90EP-T1_GE3 is specifically designed for use in high-voltage switching applications. It can provide rapid switching and data acquisition, as well as allowing for an increase in reliability due to its high reverse transfer capacitance. Additionally, the high-voltage switching capability of the SQJB90EP-T1_GE3 allows for a high-level of voltage protection, making it well-suited for use in a variety of industrial and commercial applications.

The SQJB90EP-T1_GE3 can be used for power management and motor control systems, special switchgear, and power transmission and distribution networks. It has a low on-state resistance, reducing power loss, and a high current capability, allowing it to support high-demand applications. The power efficiency of the SQJB90EP-T1_GE3 is also beneficial in applications requiring less power consumption. The device is also protected by a specialized reverse gate drain structure, providing protection against electrostatic discharge and transient voltage events.

Working Principle

The SQJB90EP-T1_GE3 is a vertical double-gate N-channel MOSFET array. It is designed to work with high-voltage switching applications, allowing for improved current handling capabilities and high-voltage protection. The device works by utilizing two parallel transistors that are arranged vertically within the array. In each transistor, two gates are connected in series, one of which is connected to the Source, and the other connected to the Drain. Current can then flow from the Source to the Drain through the two series-connected gates.

Each transistor within the array features an integrated body diode which allows for current flow to be switched on and off. When the Source and Drain are reverse biased, the body diode allows current to flow from the Drain back to the Source. This provides additional protection against electrostatic discharge and transient voltage events. Additionally, the on-state resistance has been kept low, reducing power loss characteristics.

Conclusion

The SQJB90EP-T1_GE3 is a vertical double-gate N-channel MOSFET array. It is designed for use as a cost-effective solution for high-voltage switching applications. It can be used in a variety of applications, such as for power management and motor control systems, special switchgear, and power transmission and distribution networks. The high-voltage switching capability of the SQJB90EP-T1_GE3 allows for a high-level of voltage protection, while the low on-state resistance reduces power loss. Additionally, the device is protected by a specialized reverse gate drain structure, providing protection against electrostatic charge and transient voltage events.

The specific data is subject to PDF, and the above content is for reference