SQJB68EP-T1_GE3

Series:	Automotive, AEC-Q101, TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Rds On (Max) @ Id, Vgs:	92 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	280pF @ 25V
Power - Max:	27W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerPAK® SO-8 Dual

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The SQJB68EP-T1_GE3 is a series of transistors and field effect transistors, or FETs. This series is particular known as a MOSFET array, which is a series of MOSFET transistors, also known as metal oxide semiconductor field-effect transistors. This type of transistor consists of a source, gate and drain connected through diodes on a single semiconductor substrate. This arrangement allows for a small signal to control larger output signals, making it a powerful tool for signal amplification and signal conditioning.FETs are becoming increasingly common in modern electronics, and the SQJB68EP-T1_GE3 is no exception. This series is often found in radio or television transmissions, as well as other electrical and electronic applications. This is due to its excellent conductivity and reliability in the presence of multiple, high current voltages. The SQJB68EP-T1_GE3 can also be used in more complex circuitry, such as in complex logic and switching applications. Due to the combined effects of its gate, source, and drain, the SQJB68EP-T1_GE3 is able to control the current traveling through the transistor with great precision. This allows for a wide array of applications, from sensing and controlling current, to controlling signals and logic sequences. As a result, the SQJB68EP-T1_GE3 is commonly found in both commercial and military applications.The working principle behind the SQJB68EP-T1_GE3 series is relatively simple. When voltage is applied to the gate, a field effect is created, allowing current to flow between the source and drain. When the voltage is removed, this field effect is broken and the desired control and output effects take place. The combination of this voltage induction, control, and output make the SQJB68EP-T1_GE3 ideal for a wide variety of applications in the world of electronics.As with any component, proper use and maintenance of the SQJB68EP-T1_GE3 is important. It is best to operate it within the limits of its intended design, as exceeding these limits can cause physical damage. Additionally, it is important to ensure that any connections to the SQJB68EP-T1_GE3 are in good condition and free from dirt or debris, as these can interfere with its performance. Finally, it is important to ensure that no stray voltage is present, as this can cause the transistor to malfunction.In conclusion, the SQJB68EP-T1_GE3 series is a powerful and reliable FET array for a wide range of applications. Its ease of use and reliability make it an ideal choice for a variety of commercial and military applications, making it one of the most widely used FETs on the market. It is important to maintain it properly and follow its intended design specifications, but with proper care it can provide high-level performance for years to come.

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