SQJB80EP-T1_GE3

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The SQJB80EP-T1_GE3 is a transistor array integrated circuit composed of one N-channel depletion-type MOSFET and one P-channel depletion-type MOSFET, both of which are suitable for high-voltage switching applications.

The N-channel MOSFET has an absolute maximum rating of +100V at source-drain voltage, while the P-channel MOSFET has an absolute maximum rating of -100V at source-drain voltage. Both devices must be operated at a VDD of +12V for optimum performance. The MOSFETs use a source-gate voltage of +20V and a source-drain voltage of +100V. The nominal on-resistance is 2 ohms and the breakdown voltage is 2.5V.

The MOSFETs are suitable for a variety of applications such as power supplies, switched-mode power supplies (SMPS), telecom, audio/video equipment, industrial and automotive applications. They are also suitable for use in low-cost, low-voltage applications such as consumer electronics and computer peripherals.

The working principle of the SQJB80EP-T1_GE3 MOSFET array is very simple. When a voltage is applied to both the gate and drain terminals, a current will flow between the source and drain, thus creating a conduction channel through the device. The magnitude of this current will depend on the amount of voltage applied to the gate and drain terminals. The higher the voltage applied, the higher the current that will flow through the device.

When the applied voltage reaches a certain level, called the breakdown voltage, the current will reach its peak value, and the device will become saturated, meaning that no further increase in current can be obtained. The breakdown voltage of the SQJB80EP-T1_GE3 is 2.5V.

The MOSFET array also has a number of other useful features such as low noise, fast switching, low power dissipation, and low on-resistance. The low on-resistance of the device makes it an ideal choice for applications where power loss or voltage drop across the device must be minimized.

The SQJB80EP-T1_GE3 is a versatile integrated circuit with a wide range of applications. It can be used in switching applications where high-voltage operation is required, or in low-voltage consumer electronics applications where low power dissipation and fast switching are needed. It is also suitable for use in industrial and automotive applications where high-voltage switching is desired.

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