SQM110P06-8M9L_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQM110P06-8M9L_GE3 is a single N-channel power MOSFET which is produced by Shanghai Qian Ma Si Electronic Co., Ltd. The device features a high power dissipation of 2.05 W with the low RDS(ON) of only 0.11 Ω. It also has an operating temperature of -55°C to 150°C and a drain-source voltage of 60 V.

The SQM110P06-8M9L_GE3 is designed for use in a variety of applications including hard switching, output switching and control applications in power supplies and motor control. The device has a low on-resistance and can handle up to 1.5 A of continuous current with a pulse current rating of up to 2 A. The device also features an extended drain-to-source voltage of up to 60 V and a gate-to-source voltage of up to 15 V. It also has an insulated gate with double gate protection. The device can be used in both linear and switching applications.

The working principle of the SQM110P06-8M9L_GE3 is based on the use of a thin-film MOSFET, which has both n-channel and p-channel devices. When a voltage is applied to the MOSFET, the channel in the n-channel device (D_) becomes more conductive, and it can be used to either regulate the current or control it. The p-channel device (S_) is designed to be more resistant to damage and offer additional protection to the circuit. When a voltage is applied to the S_ gate, the current flow is increased, and the device can be used to switch loads.

The SQM110P06-8M9L_GE3 is an ideal choice for applications that require a low resistance and high current capacity. The device is also well suited for use in applications that require a low gate charge and a low power-on threshold voltage. The device can also be used in applications that require a low gate-to-drain capacitance and low input capacitance. It is also suitable for use in low impedance circuits, as it has a low output capacitance. The device can also be used for switching applications.

The SQM110P06-8M9L_GE3 is an excellent choice for a variety of applications in power supplies, motor control and output switching. The device has a low-power on-threshold voltage, a low gate charge, a low output capacitance and a low power dissipation rating. The device is well suited for use in both linear and switching applications, and is suitable for use in a variety of applications requiring a low on-resistance and a high current capacity.

The specific data is subject to PDF, and the above content is for reference