SQM120N10-09_GE3 Allicdata Electronics
Allicdata Part #:

SQM120N10-09_GE3-ND

Manufacturer Part#:

SQM120N10-09_GE3

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 120A TO263
More Detail: N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount T...
DataSheet: SQM120N10-09_GE3 datasheetSQM120N10-09_GE3 Datasheet/PDF
Quantity: 1000
800 +: $ 1.10848
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8645pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQM120N10-09_GE3 is a high voltage, high performance, insulated gate bipolar transistor (IGBT) that is widely used in many industrial, automotive and commercial applications. The SQM120N10-09_GE3 is an enhancement mode (E-mode) device with a 0.18um saturated n-channel junction field-effect transistor (JFET) in the structure, which combines the best of both JFET and BJT technologies. This combination enables it to offer low on-state resistance that is suitable for radioswitching and high-current switching applications.

The SQM120N10-09_GE3 is primarily used in utility and industrial motor control, lighting, and welding and battery charging applications. It is also used in power supplies, motor drives, HVAC and other control systems, automotive systems and solar inverters. Due to its high voltage withstand capability and temperature capability, the SQM120N10-09_GE3 has a large range of operating temperature and can eliminate the need for additional padding or spark protection in some applications.

The SQM120N10-09_GE3 is designed to provide efficient, reliable, fast and cost-effective switching. Its features include high soft-switching performance and reduced switching losses, low turn-on gate charge, fast turn-on and turn-off times, and high ESD protection levels. Additionally, the SQM120N10-09_GE3 offers low gate drive power requirements and excellent thermal characteristics.

In order to operate properly, the SQM120N10-09_GE3 utilizes a gate-emitter voltage (VGE>) to control the drain-source current (IDS). When a positive VGE is applied, the device’s channel is “ON” and current will flow through it. However, when VGE is reversed, the channel turns “OFF”, preventing current flow and thus controlling the output. This type of operation makes the device ideal for controlling the output current of a load in different applications.

The SQM120N10-09_GE3 is also used in many industrial and automotive applications due to its high withstand voltage, high current switching applications and its ability to provide a safe and reliable solution to the customers.

The SQM120N10-09_GE3 is a high quality, highly reliable and cost-effective solution for motor control, lighting, and welding and battery charging applications. Its gains are transferred quickly, ensuring proper operation of equipment such as power supplies and motor drives. By providing low on-state resistance, it is suitable for radio switching and high-current switching applications, providing an easy and safe way to control the current of a load.

The specific data is subject to PDF, and the above content is for reference

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