Allicdata Part #: | SQM120P06-07L_GE3TR-ND |
Manufacturer Part#: |
SQM120P06-07L_GE3 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 120A TO263 |
More Detail: | P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SQM120P06-07L_GE3 Datasheet/PDF |
Quantity: | 4000 |
800 +: | $ 1.17369 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14280pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM120P06-07L_GE3 is a part of transistors, FETs and MOSFETs that contain single device. It is most commonly used in industries such as automotive, audio, gaming/entertainment audio, medical application and power supply unit. This device has several native hardware security feature that can be used to make your production more secure.
In the automotive field, it is used for features such as camera image detectors for in-car navigation systems, engine noise detectors, and enabling technology for operation of lane detection systems. In the audio field, the speed of the MOSFET switching is the key to its power in producing high-quality audio sounds. In games and entertainment audio, it is used to create more immersive sound and generate highly detailed sounds when hooked up to audio systems. It also aids in providing more realistic and accurate audio through equalization. Medical application is used for devices that require precise data processing capabilities, such as patient monitoring systems, drug delivery systems, and medical imaging devices.
The primary working principle of the SQM120P06-07L_GE3 is to drive a current flow with low resistance. This principle is enabled by its advanced low on resistance power MOSFET architecture. The gate control unit of the device is optimized to provide stable and very low switching losses, while its high-voltage capability allows it to be used in applications that require low on-state drain-source current up to 20 volts. The typical gate charge that is needed to turn the device on is light and the total gate charge is lower than what you would experience with a traditional MOSFET. The low gate charge ensures better energy efficiency, resulting in overall less heat dissipation in the system.
The SQM120P06-07L_GE3 also offers excellent ESD protection which prevents static charge from damaging the gate of the device. This makes it suitable for applications which are exposed to constant movement, vibrations, and charged particles. The device also offers high current carrying capabilities and lightning fast turn-on times which helps in achieving faster data transmission, power delivery and signal transmission.
In addition to the aforementioned features, the SQM120P06-07L_GE3 also offers protection against latch up, preventing the device from being damaged by high voltage surges. This is due to its schmitt trigger effect that helps in protecting the chip and also offers exceptional performance with low power consumption. This is why this device is often used in applications that require reliable power transmission and switching.
Overall, the SQM120P06-07L_GE3 is a powerful transistor and MOSFET that provides a reliable and efficient package of features. Its robust gate system, low on-state resistance, and protection features are ideal for applications in automotive, audio, gaming/entertainment audio, medicals application, and power supply units. Its high switching speed and low power consumption also make it an excellent choice for high-performance and energy-efficient systems.
The specific data is subject to PDF, and the above content is for reference
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