SQM120P10_10M1LGE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SQM120P10_10M1LGE3 is a vertical N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for applications such as high-speed switching circuits and voltage-regulating circuits. It is also suitable for use in electronic equipment that is subject to harsh environments such as vehicle engines, motorbikes, and solar cells.

The single MOSFET consists of a semiconductor material layer between two metals. In the MOSFET structure, the two metals are the source and the drain, while the semiconductor is the gate. A voltage applied to the gate changes the conductivity of the semiconductor and controls the current flow between the source and the drain.

The SQM120P10_10M1LGE3 is a vertical N-channel device. The vertical orientation of the MOSFET\'s elements and its N-channel give it the ability to handle a maximum drain-source voltage of 900V and a drain-source current of 120A.

In addition, the MOSFET\'s low input capacitance improves the response time of the device, allowing it to operate at high speed with minimal distortion. The low static drain-to-source resistance also improves switching efficiency by reducing the power dissipation of the device. The MOSFET also features a low on-resistance, allowing it to switch efficiently at high frequencies and low voltages.

The SQM120P10_10M1LGE3 is suitable for a number of applications, including automotive electronics, power management, motor control, industrial control, and consumer electronics. Due to its low on-resistance and its ability to handle large currents and voltages, it can be used in applications such as motor drives, audio amplifiers, and power supplies.

The SQM120P10_10M1LGE3 is also suitable for use in high-frequency switching applications, such as mobile phone chargers, PC USB ports, and high-frequency switching audio amplifiers. Its low input capacitance and high-speed switching capability make it ideal for these types of applications.

In summary, the SQM120P10_10M1LGE3 is a vertical N-channel MOSFET that is designed for applications subject to harsh environments. Its low on-resistance and high drain-source voltage and current capabilities make it suitable for a variety of applications, including automotive electronics, motor control, power management, industrial control, and consumer electronics. In addition, its low input capacitance and its ability to handle high-frequency switching applications make it a valuable component for a number of different applications.

The specific data is subject to PDF, and the above content is for reference