SQM25N15-52_GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D²Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2360pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	52 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SQM25N15-52_GE3 is a low cost, high performance MOSFET that is widely used in a variety of applications. It is designed for use in high-power applications and offers the benefits of low on-state drain-source resistance, fast switching time, and low gate charge. This makes it ideal for applications such as power supplies, motors, and automotive solutions. In this article, we will discuss the application field and working principle of the SQM25N15-52_GE3.

Application Field

The SQM25N15-52_GE3 is widely used in a variety of applications thanks to its low cost and high performance. It is widely used in power supplies where its fast switching time, low on-state drain-source resistance and low gate charge make it ideal for high power applications. It is also widely used in motor controllers and automotive solutions where its robust design helps to ensure reliability and accuracy.The SQM25N15-52_GE3 is also commonly used in consumer electronics, such as digital audio amplifiers and digital cameras. Its low on-state resistance and fast switching times make it ideal for switching large current loads with low power consumption. In addition, its ability to self-adjust the gate threshold voltage makes it perfect for highly-sensitive applications.

Working Principle

The SQM25N15-52_GE3 is a MOSFET that operates according to the principle of the metal-oxide-semiconductor (MOS) field effect transistor. In MOSFETs, the gate voltage is used to control the current flow from the source to the drain, as opposed to a bipolar junction transistor (BJT) which uses the current flow from the base to the collector to control the current flow from the emitter to the collector.In MOSFETs, the gate voltage is applied to an oxide layer, which acts as an insulator, that is sandwiched between two metal plates. The metal plates are connected to the source and drain respectively and function as the gate terminals.When the gate voltage is increased, a positive charge is attracted to the metal plates, resulting in an inverted p-type region between the plates. This inverted p-type region allows a conduction path between the source and drain and current flows between them. This current is what is commonly known as the drain current.When the gate voltage is decreased, the charge is repelled away from the metal plates, resulting in a non-inverted n-type region between the plates. This non-inverted n-type region inhibits the current flow and the drain current decreases until it reaches zero.

Conclusion

The SQM25N15-52_GE3 is a low cost and high performance MOSFET that is used in a variety of applications. It has low on-state drain-source resistance, fast switching time, and low gate charge, making it ideal for high power applications such as power supplies, motors, and automotive solutions. It also has the ability to self-adjust the gate threshold voltage, making it suitable for highly-sensitive applications. The SQM25N15-52_GE3 operates according to the MOSFET principle in which the gate voltage is used to control the current flow from the source to the drain.

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