SQM40022EM_GE3

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The SQM40022EM_GE3 is a dual N/P-channel power MOSFET that was released by Infineon in October 2005. The device is designed for use with various electronic systems that require high current and/or high voltage switching capabilities. This application note will discuss the SQM40022EM_GE3\'s application field and working principle.

Application Field
The SQM40022EM_GE3 is designed for Power Management (PMIC), Lighting, Analog and Motor Control applications. It can be used in power converters, high current loads, DC-DC converters, ac-dc converters, solar power electronics, motor drivers, lighting controls, and home automation systems. The device is suitable for a wide range of temperature operating conditions, and it is capable of handling transient currents up to a maximum of 800A.

Working Principle
The SQM40022EM_GE3 is a MOSFET based on the N/P-channel enhancement mode. The N-channel configuration is used to guide the current in one direction, while the P-channel configuration is used to reverse the direction of the current. The operating principle of the MOSFET is based on a quantum mechanical phenomenon called quantum tunneling. This phenomenon arises when electrons tunnel through a thin barrier layer between the source and drain. The electrons gain energy from an applied external voltage or electric field and can tunnel through the barrier layer with a measurable probability, thus carrying current. The SQM40022EM_GE3 has a maximum drain-source breakdown voltage of 22V and it can handle a maximum drain current of 80A.

Apart from the above-mentioned applications, the SQM40022EM_GE3 can also be used in different types of switching applications where low on-state resistance, high pulse current carrying capabilities, low noise, and high production yield are needed. It is also suitable for use in wireless power transmission, as it is capable of withstanding large voltage and current fluctuations.

The SQM40022EM_GE3 is a versatile and reliable power MOSFET that can be used in a variety of applications. The device offers a high breakdown voltage, a low on-state resistance, and an optimized switching speed. Its high current handling capability makes the device suitable for high power applications. In addition, its low noise operation makes it suitable for applications that require high signal accuracy.

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