SQM40031EL_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	39000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	800nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SQM40031EL_GE3 is a specialized type of field-effect transistor (FET) used for high-speed switching. It is a single MOSFET (metal-oxide-semiconductor field-effect transistor) and can switch currents up to approximately 400 A. As a type of transistor, it works by amplifying a small signal voltage to change the current flow through the device. Unlike traditional bipolar junction transistors, MOSFETs work through the electric field generated by a voltage applied to the gate in order to control the flow of current through the channel.The SQM40031EL_GE3 has two terminals: the source and the drain, and one pin for the gate. When a voltage is applied to the gate, it creates a vertical electric field across the channel, between the source and the drain. This electric field creates a local inversion layer in the channel, allowing current to flow from the source to the drain. When the voltage on the gate is zero, the electric field is nil, and the current is “OFF”. The FET therefore acts as a variable resistor, with its resistance being determined by the voltage on the gate.The SQM40031EL_GE3 has a wide range of uses, due to its capability of switching high currents. It can be used in areas as diverse as automotive, consumer, and commercial/industrial applications. One application—and a particularly important one—is in power supplies. This FET can be used to create powerful and efficient DC-DC conversion circuits, where the incoming DC power can be stepped down or stepped up to match the requirements of the load. In this case, the FET is used as an on-off switch, which is able to quickly and efficiently transfer currents between the two power sources.The SQM40031EL_GE3 can also be used in applications where high speed switching is required. These FETs can effectively switch on and off in nanoseconds, meaning that they are suitable for use in high frequency circuits such as those used in radio transmission. They are also capable of handling high voltages and currents, and are therefore suitable for use in high-power circuits.Due to their ability to quickly switch on and off, these FETs are also suitable for use in digital circuits. In this application, they are used to carry out logical operations, with the voltage on the gate determining whether an output is HIGH or LOW.In summary, the SQM40031EL_GE3 is a type of field-effect transistor (FET) designed for high-speed switching. These FETs are capable of switching currents up to approximately 400 A, and can be used in many areas of electronics such as power supplies, radio transmission, and logical operation.

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