SQM50028EM_GE3

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The SQM50028EM_GE3 is a high-efficiency, low- noise single field-effect transistor (FET), which is specifically designed as an HF general purpose amplifier transistor. Manufactured with high-performance, high-voltage material, this device features high power and excellent ruggedness characteristics by load, temperature, and voltage.

The SQM50028EM_GE3 has a maximum power output of 28 volts and a maximum current drain of 20 amps. Its low noise level and wide temperature operating range make it perfect for applications involving communications, audio and power supply management.

The SQM50028EM_GE3 utilizes N-channel enhancement mode technology to perform its functions. It has a channel resistance of 80Ω, channel voltage of 20 V and a drain-source breakdown voltage of 50 V. It also has a maximum collector-emitter saturation voltage of 3 V.

In the enhancement mode, the gate is the only control factor used to turn the transistor on and off. When the gate voltage is 0V, the transistor is off and there is no current flow through it. When the gate voltage is greater than the transistor\'s threshold voltage (VGS(th)), it begins to pass current.

This semiconductor device is used in various types of circuits as it provides several benefits like high efficiency, low power consumption, low distortion and low noise. It is used in mobile phones and other communication applications for signal amplification, voltage regulation and noise control. It is also used in power supplies for its high-voltage protection capabilities.

The SQM50028EM_GE3 has many advantages over other types of transistors. It is a low power consumption device that can operate at high frequencies with low distortion, making it ideal for linear applications such as audio amplifiers and power supplies. Moreover, its drain-source breakdown voltage makes it a good choice for applications requiring high voltage switching, like motor speed controls and motor drive controllers.

In conclusion, the SQM50028EM_GE3 is a single field-effect transistor designed for HF general purpose amplifier applications. It utilizes N-channel enhancement mode technology to deliver higher power and excellent ruggedness. With its wide temperature operating range, low noise level, high current and voltage capabilities, it is ideal for a variety of applications, including mobile phones, DC-DC converters and motor drive controllers.

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