| Allicdata Part #: | SQM50N04-4M1_GE3-ND |
| Manufacturer Part#: |
SQM50N04-4M1_GE3 |
| Price: | $ 0.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 50A TO-263 |
| More Detail: | N-Channel 40V 50A (Tc) 150W (Tc) Surface Mount TO-... |
| DataSheet: |  SQM50N04-4M1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.88521 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D²Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6715pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SQM50N04-4M1_GE3 is a single N-channel 200V this device is a mosfet(metal oxide semiconductor field effect transistor) with extremely low on-resistance which can be used in high power, low or medium frequency applications of power switching, such as switching, power inverter, freewheeling diode replacement and other motor control circuits.
The metal oxide semiconductor field effect transistor, or MOSFET as it is commonly known, is an electronic device which consists of four terminals that control the current flow. The gate is a voltage controlled terminal and the other three, the source, the drain, and the body (which is often connected to the source) are current controlled terminals. The current flow through the device is controlled by an input voltage which is applied to the gate terminal. The MOSFET is able to amplify, so it is often used as an amplifier and switching elements in circuits. The SQM50N04-4M1 device has an exceptionally low on-resistance, so it can handle very high currents, up to 150A, and is ideal for applications that require high power and low or medium frequency.
The SQM50N04-4M1 device works according to the same principle as any MOSFET. When a positive voltage is applied to its gate terminal, the gate-source electric field inverts the surface of the body which causes a large number of electrons to be attracted to the gate, creating a very high inversion current. This inversion current is the source of the devices low on-resistance and is responsible for allowing a large current to flow between the drain and the source terminals when a voltage is applied between them.
The SQM50N04-4M1 device is ideal for applications where high power and low/medium switching/power frequency is required. It provides an exceptionally low on-resistance which makes it particularly suitable for power switching applications, can handle large currents up to 150A and can operate at a wide temperature range.
In conclusion, the SQM50N04-4M1 is a single N-channel 200V mosfet ideal for high power, low or medium frequency applications. Its extremely low on-resistance enables it to handle large currents up to 150A and its wide temperature range makes it suitable for a variety of applications.
The metal oxide semiconductor field effect transistor, or MOSFET as it is commonly known, is an electronic device which consists of four terminals that control the current flow. The gate is a voltage controlled terminal and the other three, the source, the drain, and the body (which is often connected to the source) are current controlled terminals. The current flow through the device is controlled by an input voltage which is applied to the gate terminal. The MOSFET is able to amplify, so it is often used as an amplifier and switching elements in circuits. The SQM50N04-4M1 device has an exceptionally low on-resistance, so it can handle very high currents, up to 150A, and is ideal for applications that require high power and low or medium frequency.
The SQM50N04-4M1 device works according to the same principle as any MOSFET. When a positive voltage is applied to its gate terminal, the gate-source electric field inverts the surface of the body which causes a large number of electrons to be attracted to the gate, creating a very high inversion current. This inversion current is the source of the devices low on-resistance and is responsible for allowing a large current to flow between the drain and the source terminals when a voltage is applied between them.
The SQM50N04-4M1 device is ideal for applications where high power and low/medium switching/power frequency is required. It provides an exceptionally low on-resistance which makes it particularly suitable for power switching applications, can handle large currents up to 150A and can operate at a wide temperature range.
In conclusion, the SQM50N04-4M1 is a single N-channel 200V mosfet ideal for high power, low or medium frequency applications. Its extremely low on-resistance enables it to handle large currents up to 150A and its wide temperature range makes it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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