SQM60030E_GE3 Allicdata Electronics
Allicdata Part #:

SQM60030E_GE3TR-ND

Manufacturer Part#:

SQM60030E_GE3

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 80V 120A D2PAK
More Detail: N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²...
DataSheet: SQM60030E_GE3 datasheetSQM60030E_GE3 Datasheet/PDF
Quantity: 1000
800 +: $ 1.23890
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQM60030E_GE3 is a high-above-channel enhancement-mode MOSFET (also known as a voltage-controlled MOSFET or VMOS). It is designed to be used in higher-current, higher-voltage power applications. It is particularly suitable for applications where a high input impedance is needed, such as in the switching of high-power LEDs, in the power conversion of DC-DC converters, and in the control circuits of switching power converters.

The SQM60030E_GE3 has an advantage over its competitors in that it has a very low on-resistance of 600 mΩ and a maximum also current rating of 30 amps. This allows it to be used in applications involving both high voltages and high currents.

The SQM60030E_GE3 is a three-terminal device. It has a source terminal, a gate terminal, and a drain terminal. The device works by the application of a voltage signal to the gate terminal. When that voltage is applied, it creates an electric field within the device, which modulates the current flow in between the source and the drain terminals.

The SQM60030E_GE3 can be used in a variety of applications. In high-power LED applications, it can be used to efficiently and quickly switch between different power levels, thereby increasing or decreasing the brightness of the array. In DC-DC converters, it can be used to quickly control the voltage and current levels to achieve optimum efficiency. In switching power supplies, it can be used to control the switching frequency and the current and voltage levels.

The working of a MOSFET is based on the behavior of electrons in a semiconductor material. When the gate terminal is at a low voltage (typically 0 volts), the current between the source and drain is small. When the gate voltage is increased, a gate electric field is created which attracts the electrons in the channel area of the device and forms a conducting electron-rich channel between the source and the drain. This in turn allows the flow of current from the source to the drain.

The SQM60030E_GE3 can handle both high voltages and high currents, making it ideal for such applications as LED switching and power conversion. Its low on-resistance and high current rating make it suitable for even the most demanding applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SQM6" Included word is 3
Part Number Manufacturer Price Quantity Description
SQM60030E_GE3 Vishay Silic... 1.37 $ 1000 MOSFET N-CH 80V 120A D2PA...
SQM60N06-15_GE3 Vishay Silic... 0.97 $ 1000 MOSFET N-CH 60V 56A TO263...
SQM60N20-35_GE3 Vishay Silic... 1.3 $ 1000 MOSFET N-CH 200V 60A TO26...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics