Allicdata Part #: | SQM60030E_GE3TR-ND |
Manufacturer Part#: |
SQM60030E_GE3 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 80V 120A D2PAK |
More Detail: | N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²... |
DataSheet: | SQM60030E_GE3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.23890 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM60030E_GE3 is a high-above-channel enhancement-mode MOSFET (also known as a voltage-controlled MOSFET or VMOS). It is designed to be used in higher-current, higher-voltage power applications. It is particularly suitable for applications where a high input impedance is needed, such as in the switching of high-power LEDs, in the power conversion of DC-DC converters, and in the control circuits of switching power converters.
The SQM60030E_GE3 has an advantage over its competitors in that it has a very low on-resistance of 600 mΩ and a maximum also current rating of 30 amps. This allows it to be used in applications involving both high voltages and high currents.
The SQM60030E_GE3 is a three-terminal device. It has a source terminal, a gate terminal, and a drain terminal. The device works by the application of a voltage signal to the gate terminal. When that voltage is applied, it creates an electric field within the device, which modulates the current flow in between the source and the drain terminals.
The SQM60030E_GE3 can be used in a variety of applications. In high-power LED applications, it can be used to efficiently and quickly switch between different power levels, thereby increasing or decreasing the brightness of the array. In DC-DC converters, it can be used to quickly control the voltage and current levels to achieve optimum efficiency. In switching power supplies, it can be used to control the switching frequency and the current and voltage levels.
The working of a MOSFET is based on the behavior of electrons in a semiconductor material. When the gate terminal is at a low voltage (typically 0 volts), the current between the source and drain is small. When the gate voltage is increased, a gate electric field is created which attracts the electrons in the channel area of the device and forms a conducting electron-rich channel between the source and the drain. This in turn allows the flow of current from the source to the drain.
The SQM60030E_GE3 can handle both high voltages and high currents, making it ideal for such applications as LED switching and power conversion. Its low on-resistance and high current rating make it suitable for even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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