SQM60N20-35_GE3 Allicdata Electronics
Allicdata Part #:

SQM60N20-35_GE3-ND

Manufacturer Part#:

SQM60N20-35_GE3

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 60A TO263
More Detail: N-Channel 200V 60A (Tc) 375W (Tc) Surface Mount TO...
DataSheet: SQM60N20-35_GE3 datasheetSQM60N20-35_GE3 Datasheet/PDF
Quantity: 1000
800 +: $ 1.17369
Stock 1000Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQM60N20-35_GE3 is a single-channel electrical component from a family of field-effect transistors (FETs) known as Metal-Oxide-Semiconductor FETs (MOSFETs). It is designed to accommodate a wide range of electrical current, from 10 amperes (A) to 600A.

A MOSFET based around the SQM60N20-35_GE3 component is well-suited to power applications that can range from carrying low-current pulses to managing high-current continuous applications. The component\'s ability to handle high-current loads makes it a popular choice for controlling wind turbines, solar energy systems, and military/aerospace applications.

The SQM60N20-35_GE3 component is an "enhancement-mode" type MOSFET, meaning that it is designed to conduct current with little or no applied voltage. This is an important selling point because it allows engineers to control the on/off state of the component without the need for external switching components, such as relays. This is beneficial in that it reduces the need for additional codings costs and increases the reliability of the device.

The SQM60N20-35_GE3 family of components is specifically designed for use with a low forward-biased gate-source voltage, meaning it can be used in applications where extremely low voltage is necessary. Its low gate-source leakage is also beneficial, as it allows engineers to maintain more precise control over the component\'s operating temperature. This feature is especially useful in applications where precision and high efficiency are paramount, such as with fuel cells or aerospace applications.

In order to keep the components within their specified operating temperature range, an adequate heat sink must be implemented. The SQM60N20-35_GE3 component is engineered to diffuse and release heat quickly, but an extra measure of insulation may be necessary depending on the application. To ensure proper function and efficiency, designers should consult the manufacturer\'s datasheet for detailed information on the component\'s thermal characteristics.

Overall, the SQM60N20-35_GE3 component from the family of MOSFETs is a powerful single-channel electrical component that offers engineers the ability to manage power, both high and low, efficiently with minimal external switching components. The component\'s unique characteristics, such as its capacity to handle large currents and its low gate-source leakage, make it suited for a vast range of commercial, military, and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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