Allicdata Part #: | SQM60N20-35_GE3-ND |
Manufacturer Part#: |
SQM60N20-35_GE3 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 60A TO263 |
More Detail: | N-Channel 200V 60A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SQM60N20-35_GE3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.17369 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM60N20-35_GE3 is a single-channel electrical component from a family of field-effect transistors (FETs) known as Metal-Oxide-Semiconductor FETs (MOSFETs). It is designed to accommodate a wide range of electrical current, from 10 amperes (A) to 600A.
A MOSFET based around the SQM60N20-35_GE3 component is well-suited to power applications that can range from carrying low-current pulses to managing high-current continuous applications. The component\'s ability to handle high-current loads makes it a popular choice for controlling wind turbines, solar energy systems, and military/aerospace applications.
The SQM60N20-35_GE3 component is an "enhancement-mode" type MOSFET, meaning that it is designed to conduct current with little or no applied voltage. This is an important selling point because it allows engineers to control the on/off state of the component without the need for external switching components, such as relays. This is beneficial in that it reduces the need for additional codings costs and increases the reliability of the device.
The SQM60N20-35_GE3 family of components is specifically designed for use with a low forward-biased gate-source voltage, meaning it can be used in applications where extremely low voltage is necessary. Its low gate-source leakage is also beneficial, as it allows engineers to maintain more precise control over the component\'s operating temperature. This feature is especially useful in applications where precision and high efficiency are paramount, such as with fuel cells or aerospace applications.
In order to keep the components within their specified operating temperature range, an adequate heat sink must be implemented. The SQM60N20-35_GE3 component is engineered to diffuse and release heat quickly, but an extra measure of insulation may be necessary depending on the application. To ensure proper function and efficiency, designers should consult the manufacturer\'s datasheet for detailed information on the component\'s thermal characteristics.
Overall, the SQM60N20-35_GE3 component from the family of MOSFETs is a powerful single-channel electrical component that offers engineers the ability to manage power, both high and low, efficiently with minimal external switching components. The component\'s unique characteristics, such as its capacity to handle large currents and its low gate-source leakage, make it suited for a vast range of commercial, military, and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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