SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3 is a field effect transistor (FET) that is widely used in semiconductor circuits and systems. This MOSFET is a single version of FET, which means that it is composed of only one semiconductor device. It is a reliable and low-cost option for numerous applications.

Overview

The SQV120N06-4M7L_GE3 is a high-resistance FET that is capable of handling various power and voltage levels. This particular model is a 120V MOSFET that has an n-channel type and low gate charge. It also has an RDS(on) maximum of 22 mΩ and a gate threshold voltage of 2.6 V.

The MOSFET is designed to effectively regulate the flow of electrons with low levels of power consumption. This transistor is manufactured by Fairchild Semiconductor and it conforms to the requirements of the AEC-Q101 standard.

Application Fields

The SQV120N06-4M7L_GE3 is a versatile FET that can be used in a wide range of electronic circuits and systems. It is an ideal choice for power management and voltage regulation tasks. This MOSFET can be used in applications that require a high switching speed, such as in video amplifiers, solar inverter circuits, motor controls, and AC-DC conversion converters.

The SQV120N06-4M7L_GE3 can also be used in LED lighting and LED driver circuits. It is also suitable for switching applications, such as in power supplies and converters. In addition, this transistor is also suitable for battery chargers, DC-DC converters, and broadband amplifiers.

Working Principle

A MOSFET is a voltage-controlled device that is composed of an insulated-gate field-effect transistor (MOSFET) and a p-n junction. When the gate voltage is low, the transistor is turned off and no current flows between the drain and source. When the gate voltage is high, the transistor is turned on and current flows between the drain and source.

The SQV120N06-4M7L_GE3 is a voltage-controlled device that utilizes the same working principle. When the gate voltage increases to the transistor\'s threshold voltage, the channel between the drain and source is opened and current flows. The amount of current that flows is proportional to the amount of voltage that is supplied to the gate.

Conclusion

The SQV120N06-4M7L_GE3 is a versatile field effect transistor (FET) that is composed of one MOSFET. This transistor is widely used in various power management and voltage regulation applications. Its working principle is based on the voltage-controlled nature of the MOSFET, which allows the current to be regulated with the gate voltage.