SQV120N10-3M8_GE3

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7230pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SQV120N10-3M8_GE3 is a Field Effect Transistor (FET) used in medium or high power applications within the system. It is a single MOSFET (Metal Oxide Semiconductor FET), which is often used when designing power distribution systems. The FET is composed of a source, gate, and drain. A voltage applied to the gate effects the conductivity of the channel in between the source and drain, allowing the device to control current flow.The most common application for a FET is power distribution, as it offers high frequency switching capability and low power losses at high current levels. It is also used for applications with alternate environment such as extreme temperatures, vibration, or shock resistance. The SQV120N10-3M8_GE3 is often used in automotive, industrial, and datacom applications due to its easy to use format and reliable performance. It features low gate charge, small gate resistance, and low RDS(on).The SQV120N10-3M8_GE3 works by having an electric field applied to its gate terminal. This creates an electric field which interrupts the flow of electrons in the source and drain, respectively. Depending on the magnitude of the electric field, current will either be blocked or let through. This makes it an ideal candidate for applications that require current switching, voltage regulating, or current limiting.Another benefit of the SQV120N10-3M8_GE3 is the variety of package styles available. Packages include DPAK (PowerPAK), D2-PAK (in-line), and SOD123 (Surface Mount). This allows for the MOSFET to be placed conveniently in whatever designated area is necessary. This is especially important in applications that require high power distribution in tight spaces.The SQV120N10-3M8_GE3 is capable of operating at temperatures between -55°C and 150°C and can withstand an avalanche current of up to 300A. Thermal resistance ranges from 3.5°C/W (D2-PAK) to 1.6°C/W (PowerPAK) which helps the device to dissipate heat efficiently and safely.In conclusion, the SQV120N10-3M8_GE3 is a single MOSFET meant for medium or high power applications. It is used for power distribution and is capable of absorbing large currents. Its easy to use and reliable performance make it an ideal option for automotive, industrial, and datacom applications. Its variety of package styles and high thermal resistance allow for the device to be placed in convenient locations and dissipate heat efficiently.

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