SST3906HZGT116 Allicdata Electronics
Allicdata Part #:

SST3906HZGT116TR-ND

Manufacturer Part#:

SST3906HZGT116

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP GENERAL PURPOSE TRANSISTOR
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200m...
DataSheet: SST3906HZGT116 datasheetSST3906HZGT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01855
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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The SST3906HZGT116 is a type of bipolar junction transistor (BJT) constructed as a single, PNP semiconductor. It is a commonly used component in many types of electronic circuits, and it is designed to amplify electric signals, control current flow, switch electronicloads, and can also be used to activate electric relays. These small-signal components are particularly useful in low-power applications such as automotive applications, power supplies, medical devices, and industrial control systems. To better understand the uses of this component and its working principles, it is important to understand the structure of a bipolar junction transistor and the properties that give it its functionality.

The SST3906HZGT116 is composed of three layers of semiconductor material. Each layer is made of either n-type or p-type material. The central layer is called the "base" and the layers adjacent to it are referred to as the "emitter" and the "collector" layers. The base and collector layers are connected together with a positive voltage applied across the base and collector terminals. This arrangement allows current to flow between the two layers, creating a junction between them. The emitter layer is then connected to ground, which forms a junction between it and the other two layers.

When the transistor is forward-biased, meaning that the collector-base voltage has a greater magnitude than the emitter-base voltage, current flows between the collector and the emitter layers. This current flow is amplified at the emitter, which allows a signal to be transmitted to an external circuit. However, if the current flowing through the transistor is too high, the transistor will be reversed biased, and the current flow through it will be reduced.

The amount of current that the SST3906HZGT116 allows to flow is known as its maximum rated current, and it can be used to determine the types of applications for which it is suitable. This component is rated for up to 1.2mA, which makes it ideal for use in low-power applications such as automotive, power supplies, medical devices, and industrial control systems. Additionally, this component\'s high speed switching capabilities and low saturation voltage make it a suitable choice for high-frequency applications.

The SST3906HZGT116 is a useful component in many types of electronic circuits. Its wide variety of features, such as its low maximum current, high speed switching capability and low saturation voltage make it perfect for a range of applications. It is particularly useful in low-power applications, and its ability to amplify electric signals, control current flow, and switch electrical loads makes it especially suitable for automotive, power supplies, and industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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