SST49LF008A-33-4C-NHE-T Allicdata Electronics
Allicdata Part #:

SST49LF008A-33-4C-NHE-TTR-ND

Manufacturer Part#:

SST49LF008A-33-4C-NHE-T

Price: $ 2.96
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 8M PARALLEL 32PLCC
More Detail: FLASH Memory IC 8Mb (1M x 8) Parallel 33MHz 120ns ...
DataSheet: SST49LF008A-33-4C-NHE-T datasheetSST49LF008A-33-4C-NHE-T Datasheet/PDF
Quantity: 1000
750 +: $ 2.69295
Stock 1000Can Ship Immediately
$ 2.96
Specifications
Write Cycle Time - Word, Page: 20µs
Base Part Number: SST49LF008A
Supplier Device Package: 32-PLCC (11.43x13.97)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 120ns
Series: SST49
Clock Frequency: 33MHz
Memory Size: 8Mb (1M x 8)
Technology: FLASH
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SST49LF008A-33-4C-NHE-T is a type of memory manufactured by Microchip and is mostly used in a broad range of industrial and consumer applications. Such applications range from office equipment, medical devices, audio/video applications, computers and gaming devices. The memory is fabricated using latest technology and high quality control processes.

The SST49LF008A-33-4C-NHE-T consists of a 8Mbit structure organized as one million 64 byte sectors, totalling 8Mbits. Each sector is divided into 32 sections, each 64 bytes in size. The sector is further divided into two 16 byte Flash pages. Each page can be separately and independently manipulated.

The main advantage of the SST49LF008A-33-4C-NHE-T is its ability to store large amounts of data while providing a low power consumption requirement. The memory is also tested and industry approved, making it reliable enough for use in mission-critical systems.

The working principle behind the SST49LF008A-33-4C-NHE-T is a Multi-Layer Metal (MLC) technology, which uses multiple layers of metal structures to create a highly efficient three-dimensional memory cube. Each layer of metal structures is separated from the other by a insulating dielectric material. The MLC structure allows for extremely fast read/write operations without any compromise on data integrity.

In addition to its MLC technology, the SST49LF008A-33-4C-NHE-T also features less-power active mode, along with its low access time, which makes it suitable for fast storage area bus read-write operations. It also includes error detection and correction (EDC) capability, which allows the memory to be more reliable and reduce data corruption.

Overall, the SST49LF008A-33-4C-NHE-T has been designed and tested to provide a robust and reliable memory structure in a variety of industrial and consumer applications. Its low power active mode and advanced MLC technology make it well suited for use in mission-critical applications, while its faster read/write times and robust error correction capability make it an ideal choice for general-purpose use.

The specific data is subject to PDF, and the above content is for reference

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