Allicdata Part #: | SST4119-T1-E3-ND |
Manufacturer Part#: |
SST4119-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 70V 200UA SOT-23 |
More Detail: | JFET N-Channel 40V 350mW Surface Mount TO-236 |
DataSheet: | SST4119-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 2V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 10V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236 |
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Junction Field Effect Transistors (JFETs) are commonly used in almost all high-power applications such as in broadcast TV and radiations. The SST4119-T1-E3 is an example of a JFET that can be used in many applications. This article will discuss the application field and working principle of the SST4119-T1-E3 JFET.
The SST4119-T1-E3 is a N-channel depletion-type JFET. This device’s maximum drain current is 100mA and the maximum drain-source breakdown voltage is 55V. It has a total gate capacitance of 0.2pF and a current gain bandwidth (ft) of 300MHz. All of these features make this JFET suitable for many applications.
The SST4119-T1-E3 is typically used in valve control, audio stages, amplifiers, modulators, and more. It can also be used in receiver amplifiers and mixer stages. Its wide range of operation and low VGS(off) gives it the versatility to be used in any number of applications.
The working principle of this JFET is very simple. It is a type of transistor in which current flow is regulated by the voltage applied to the gate. The voltage at the gate is used to create a reverse flow of electric current in the channel between the source and the drain. This creates an electronic threshold effect, so that the drain current is only able to flow when the voltage at the gate is above a certain level.
The SST4119-T1-E3 JFET has a very low input capacitance and gate leakaage current. Due to these features, it has very low noise and very low distortion in output waveforms. This makes it suitable for applications requiring high accuracy in signal processing such as microphone preamplifiers, instrument amplifiers, and more.
The SST4119-T1-E3 JFET is extremely rugged and reliable. It can withstand temperatures up to 150°C and high humidity without failure. This makes it ideal for use in harsh environment applications.
In summary, the SST4119-T1-E3 is a N-channel depletion-type JFET with many features making it suitable for a wide range of applications. It has a low input capacitance, low gate leakage current, and low VGS(off), which make it versatile and reliable. Its working principle is based on the electronic threshold effect, whereby current is only able to flow when the voltage at the gate is above a certain level.
The specific data is subject to PDF, and the above content is for reference
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