Allicdata Part #: | SST4416-T1-E3TR-ND |
Manufacturer Part#: |
SST4416-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 36V 5MA SOT-23 |
More Detail: | JFET N-Channel 30V 350mW Surface Mount SOT-23 |
DataSheet: | SST4416-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 3V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 2.2pF @ 15V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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The SST4416-T1-E3 is a junction field-effect transistor (JFET), a type of field-effect transistor used for low-noise and low-distortion amplification. It is designed specifically for audio applications, and its wide bandwidth, low distortion characteristics make it exceptionally well-suited for use in audio preamplifiers, mixer circuitry and oscillator circuits.
The SST4416-T1-E3 is built on an N-type silicon substrate, and has N-channel JFETs formed in the substrate by implanting dopant atom into the substrate. The source and drain connections correspond to the N- and P-type doped regions of the substrate. The SST4416-T1-E3 is controlled by the gate voltage, and both the drain current (ID) and drain-source voltage (VDS) increase as the gate voltage (VGS) is increased. The maximum drain current for the SST4416-T1-E3 is 5A at 25℃, and the Drain-Source breakdown voltage is 20V.
The immunity of SST4416-T1-E3 towards noise and irregularities is achieved by the gate-to-source capacitance (or “gate capacitance”), which also provides the device with mobility and fast response. The gate capacitance is usually in the range of 200pF and is dependent on the gate voltage, drain voltage, temperature and the device\'s physical parameters. The gate-to-drain and drain-to-source capacitances of the SST4416-T1-E3 are in the range of 10-20pF, and the drain-to-source and gate-to-source resistances are in the range of 10-100kOhms. The input impedance for the SST4416-T1-E3 is typically between 1MOhm and 10MOhm.
The SST4416-T1-E3 is mainly used in audio applications, but can also be used in other areas as well. Its low noise and low distortion characteristics make it well-suited for many applications, such as low-level signal amplification, pulse width modulation, and oscillator or mixer circuits. The SST4416-T1-E3 is also well-suited for audio preamplifiers since it provides high gain, wide bandwidth and low distortion. Additionally, its low power consumption makes it ideal for use in portable applications.
In conclusion, the SST4416-T1-E3 is a great choice for applications where low noise and low distortion are a must. Its wide bandwidth, low distortion characteristics make it an ideal choice for low-level signal amplification applications. Its immunity towards noise and irregularities make it a great choice for audio preamplifiers, mixer circuitry and oscillator circuits.
The specific data is subject to PDF, and the above content is for reference
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