SST4401HZGT116 Discrete Semiconductor Products |
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Allicdata Part #: | SST4401HZGT116TR-ND |
Manufacturer Part#: |
SST4401HZGT116 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN MEDIUM POWER TRANSISTOR (SWI |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200m... |
DataSheet: | SST4401HZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02024 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The SST4401HZGT116 single bipolar transistor is a NPN type device typically used in low power applications. It is mainly used in high frequency switching and amplifying circuits, and it is especially suitable for use in applications such as line driver stages, load switches, and signal attenuators.
The collector-emitter voltage of this device has a maximum rating of 60V. It has an excellent frequency response and can handle high current and voltage. Its maximum collector current rating is 10A, and its maximum collector dissipation is 4W. Its maximum total power dissipation is 4.6W.
The SST4401HZGT116 single bipolar transistor works on the basis of the transfer of electrons between the emitter and the collector of a semiconductor chip. When electrons flow through the emitter of the transistor they are pushed into the base, which acts as a gate or barrier. When the current is switched off, the electrons in the base region are left behind. These excess electrons in the base create a depletion region, so that no current can pass. When a voltage is applied to the base region, the depletion layer is reduced, allowing current to pass through the emitter to the collector. This is known as the \'base current\'.
The SST4401HZGT116 single bipolar transistor is a robust device that is suitable for a variety of applications. Its low cost and high performance make it an ideal choice for a wide range of projects. It is suitable for design in various high-speed switching circuits and is highly suitable for radio frequency applications. It is also used in a wide range of low power applications such as power MOSFET gate drivers, and in logic circuits.
This device is also highly suitable for use in broadcast applications, as it has a good frequency response and excellent gain. It is also suitable for use in computer networks, as its maximum operating temperature is specified as 150°C. This allows the chip to be used in harsh operating conditions.
The SST4401HZGT116 single bipolar transistor is a highly reliable device, with a high breakdown rating and maximum operating temperature. It is easy to use and has a wide range of applications. It is also easy to find an appropriate matching pair for the device due to its high level of compatibility. With these features, it is an ideal choice for various low power applications.
The specific data is subject to PDF, and the above content is for reference
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