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Transistors - Bipolar (BJT) - Single

The SST4401T116 is a single C-MOS transistor with a voltage of -80V, a maximum current of -10A, a device width of 3.3 mm and a total package power dissipation of 115W. It is available in a TO-220f package. The SST4401T116 is designed for use in high power switching applications. Additionally, it offers very low on-state resistance and high efficiency in switching operations.

Features

• -80V voltage
• -10A maximum current
• 3.3 mm device width
• 115W total package power dissipation
• TO-220f package
• Very low on-state resistance
• High efficiency in switching operations

Applications

The SST4401T116 is suitable for a wide range of applications including high power switching, general purpose, industrial, relay and automotive. It is widely used in telecoms applications, such as switching and control systems, and other applications like UPS, DC/DC converters and battery management systems.

Working principle

The basic principle behind the SST4401T116 is that of a three layer bipolar transistor. The three layers of the transistor are the base (B), collector (C) and emitter (E). When voltage is applied to the base of the transistor, the current flowing through the collector and emitter will increase, which in turn increases the output current. By controlling the voltage applied to the base, the transistor can be used as an amplifier or as a switch to control other devices.

The SST4401T116 is an enhancement-mode C-MOS transistor, meaning that the current flowing through it can only be increased by applying a positive voltage to the base. The transistor cannot be used to create a completely open circuit because there is still a small current flowing through it even with the base voltage set to zero. This is because the built-in C-MOS circuitry ensures that there is always a small amount of current flowing.

The SST4401T116 is able to switch larger currents than a standard two-layer bipolar transistor due to its C-MOS construction. This makes it ideal for use in high power switching applications, as it can handle larger currents than a standard bipolar transistor.

Conclusion

The SST4401T116 is a single C-MOS transistor with a -80V voltage, a -10A maximum current, and a 3.3 mm device width. It is designed for high power switching applications and offers very low on-state resistance and high efficiency in switching operations. Additionally, it is suitable for a wide range of applications, including telecoms, UPS, DC/DC converters, battery management systems and general-purpose industrial relay.

The basic principle behind the SST4401T116 is that of a three-layer bipolar transistor. When a voltage is applied to the base of the transistor, the collector and emitter currents will increase, allowing it to be used as an amplifier or as a switch to control other devices. The SST4401T116 is an enhancement-mode C-MOS transistor and is capable of switching larger currents than a standard bipolar transistor, making it perfect for high power applications.

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