Allicdata Part #: | SST4403T116TR-ND |
Manufacturer Part#: |
SST4403T116 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 40V 0.6A SST3 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 200m... |
DataSheet: | SST4403T116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04895 |
6000 +: | $ 0.04406 |
15000 +: | $ 0.03916 |
30000 +: | $ 0.03672 |
75000 +: | $ 0.03263 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Base Part Number: | T4403 |
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The SST4403T116 is a single-type bipolar junction transistor (BJT). It is a three-terminal, high-power device for use in various applications ranging from industrial to home use. It is a low-power monolithic integrated circuit that is suitable for a variety of applications.
A transistor is a semiconductor device that amplifies or switches electrical signals and electrical power. It is made of a thin silicon layer that has alternating layers of n-type and p-type semiconductor material. Transistors come in a variety of forms and sizes, but the most common ones are the BJT, Field Effect Transistor (FET) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
The SST4403T116 is a type of BJT that uses two PN junctions connected by a third lead that serves as the collector. The base and the collector are connected by a thin oxide layer that prevents current from flowing from the collector to the base. This thin oxide layer is called the base-collector barrier.
The SST4403T116 is composed of three layers: the base layer, the collector layer, and the emitter layer. The base layer provides the electrical conduction between the collector and the emitter. The collector layer is where the voltage is applied and the emitter layer is where the current leaves the transistor.
The working principle of the SST4403T116 is similar to that of other BJTs. When the voltage applied to the base terminal (VBE) is positive, a current called the \'base current\', IBE, flows through the base. This causes a current called the \'collector current\', ICE, to flow from the collector to the emitter. This is known as the transistor\'s \'on\' state. When the voltage is reversed, the transistor is said to be in its \'off\' state and the current will not flow from the collector to the emitter.
The SST4403T116 has a wide range of applications. It can be used for switching and amplification in consumer electronics such as radios, televisions, and amplifiers. It can also be used in digital circuits for analog-to-digital conversion and signal processing, and for communication circuitry. In industrial applications, it can be used for motor control, temperature sensing, and light sensing.
The SST4403T116 is a powerful, low-power transistor that can be used in a variety of applications. Its three-terminal design makes it suitable for a wide range of applications ranging from consumer electronics to industrial uses. Its working principle is simple and it can amplify or switch electrical signals and current to meet the needs of different applications.
The specific data is subject to PDF, and the above content is for reference
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