SST49LF080A-33-4C-WHE

Write Cycle Time - Word, Page:	20µs
Base Part Number:	SST49LF080A
Supplier Device Package:	32-TSOP
Package / Case:	32-TFSOP (0.488", 12.40mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 85°C (TA)
Voltage - Supply:	3 V ~ 3.6 V
Memory Interface:	Parallel
Access Time:	120ns
Series:	SST49
Clock Frequency:	33MHz
Memory Size:	8Mb (1M x 8)
Technology:	FLASH
Memory Format:	FLASH
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tray

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MemoryThe SST49LF080A-33-4C-WHE is a NAND flash memory chip known for its wide range of practical applications. This memory chip has been widely used in various electronic products, such as mobile phones and computers, since it offers high density, good stability, flexibility and scalability. The SST49LF080A-33-4C-WHE is a high performance, 8-megabit (1 megabyte) NAND flash memory chip that can store up to 16 gigabits of data.The SST49LF080A-33-4C-WHE can be used for a variety of purposes and applications. It can be used for data storage in personal electronics such as digital cameras, MP3 players, and mobile phones. This memory chip can also be used for data logging purposes, including applications for embedded system design, microcontroller programming, and DSP algorithms. The flash memory chip can be used for embedded applications such as smart cards, automotive instrumentation, and medical device applications.The SST49LF080A-33-4C-WHE is a non-volatile memory chip. This means that the data stored in the chip will not be lost or erased when the power is turned off. The NAND flash memory chip also has a very low power consumption and is highly reliable. It has a high read/write speed and is stable even when the voltage is changed. The memory chip offers a variety of features and is suitable for high temperature operation.The working principle of the SST49LF080A-33-4C-WHE is based on non-volatile memory cells, which are organized into a specific configuration. Each memory cell consists of two parts, a floating gate and a control gate. The main function of these elements is to store a binary data bit (1 or 0). The binary data bits stored in the NAND chip are written, read, and erased through the use of electric signals that are applied to the control gate.To write data to the NAND flash memory chip, an electrical current is passed through the control gate which changes the voltage of the floating gate. The change in voltage allows for an electron to be stored on the floating gate, which then stores a binary data bit. To read the data from the chip, an electrical current is used to reverse the voltage on the control gate and cause the binary data bit on the floating gate to be read as a logic high or logic low. To erase the data stored on the memory chip, the voltage is changed a third time and the electrons stored on the floating gate are dispersed.In summary, the SST49LF080A-33-4C-WHE memory chip is a high performance and reliable NAND flash memory chip with a wide range of applications. It is a non-volatile memory chip with low power consumption and high read/write speed. The working principle of the chip is based on non-volatile memory cells which are organized into a specific configuration and can store binary data bits. The chip can read, write, and erase data by changing the voltage applied to the control gate.

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