STB95N4F3 Discrete Semiconductor Products

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Transistors are one of the fundamental components in electronic circuits. They are popularly used to amplify signals and control electrical energy. There are various types of transistors, with the field effect transistors (FETs) and metal oxide semiconductor field effect transistors (MOSFETs) being the most common. Amongst the MOSFETs, the single type FETs are most commonly used in a wide variety of applications. One such single FET device is the STB95N4F3.

The STB95N4F3 device is an enhancement mode N-channel MOSFET consisting of four terminals - Drain (D), Gate (G), Source (S) and Body (B). This device comes in a 4-pin TO-220 package and is used in a variety of applications such as voltage and current switching. The device has a maximum drain-source voltage Vds (max) of 80V and a maximum drain current Idd (max) of 5A. The device also has a maximum gate-source voltage Vgs (max) of ±20V and a high input impedance that enables it to drive very low currents.

The working principle of the STB95N4F3 is based upon the transfer of electrons from the source, across the oxide layer (insulator layer) to the drain, under the influence of an applied electric field at the gate. The STB95N4F3, like all other MOSFETs, works in two possible modes: enhancement mode and depletion mode. In the enhancement mode, the transistor is turned on by activating the gate voltage, while in depletion mode the transistor is turned off by decreasing the gate voltage. In both cases, the current that flows between the source and drain is determined by the gate voltage.

The STB95N4F3 is an ideal device for circuits that use a low voltage and high current, such as in audio amplifiers, DC power supplies and switching regulators. The device is also highly suitable for applications that require fast switching, such as relays, brushless DC motors and power MOSFETs. Additionally, the device is also suitable for applications that require low-noise operation, such as electric guitars and synthesizers.

The STB95N4F3 is also widely used in communication and broadcast systems, as the device exhibits extremely low noise characteristics. It is also suitable for use in high-frequency circuits, as the device is able to maintain stable and predictable operation in the presence of strong electric fields. Furthermore, the device is also suitable for use as a variable resistor in high-frequency systems, as it has a high input impedance and can be used as a variable resistor element.

In conclusion, the STB95N4F3 is an enhancement-mode N-channel single MOSFET device that is suitable for a wide variety of applications, such as voltage and current switching, fast switching and low noise operation. The device is an ideal choice for applications that require efficient and accurate current control as well as low noise performance. Furthermore, its versatility also makes it suitable for use in high-frequency circuits and as a variable resistor element.

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